MT47H32M16CC-3E:B

The MT47H32M16CC-3E:B is a 512 Mbit DDR2 SDRAM configured as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements a 4-bank DDR2 architecture with a 4n-bit prefetch, DLL, selectable burst lengths and programmable CAS latency for high-speed synchronous operation.

This device is intended for designs that require volatile, high-speed parallel DDR2 memory operating from a 1.7 V to 1.9 V supply and supporting data rates consistent with DDR2 timing grades. Its value is in delivering JEDEC-standard 1.8 V I/O behavior, selectable timing options, and a compact 84-ball FBGA footprint.

Key Features

• Core / Architecture 4 internal banks with a 4n-bit prefetch architecture and DLL to align DQ and DQS transitions with CK.
• Memory Organization 32M × 16 organization providing 512 Mbit total capacity with parallel x16 data width.
• DDR2 SDRAM Timing Options Programmable CAS latency (CL), posted CAS additive latency (AL), WRITE latency = READ latency − 1 tCK, and selectable burst lengths of 4 or 8. Key timing grades and cycle times are provided in the datasheet.
• Performance Supports clocking up to the device speed grade options (example timing points include DDR2-400 through DDR2-800 equivalents); specified clock frequency in the product data is 333 MHz and access time 450 ps.
• Power VDD and VDDQ = +1.8 V ±0.1 V (product supply range listed as 1.7 V to 1.9 V) with JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Signal and Data Integrity Differential data strobe (DQS/DQS#) support and on-die termination (ODT) options to assist signal integrity on high-speed interfaces.
• Package 84-ball TFBGA (84-FBGA) package footprint (12 mm × 12.5 mm) for compact board-level integration.
• Temperature Range Commercial operating temperature specified as 0°C to 85°C (T_C = 0°C to 85°C) in the product specifications.
• Standards and Compliance JEDEC clock jitter support and RoHS compliance indicated in the datasheet.

Typical Applications

• High-speed system memory — Provides volatile DDR2 parallel memory for systems requiring 512 Mbit capacity and x16 data width.
• Embedded platforms — Suitable for embedded designs that require JEDEC-standard 1.8 V I/O and compact FBGA packaging.
• Board-level memory expansion — Use where an 84-ball FBGA (12 mm × 12.5 mm) package and DDR2 timing options are required on the PCB.

Unique Advantages

• JEDEC-standard 1.8 V I/O: Ensures compatibility with SSTL_18 signaling environments for straightforward interface design.
• Flexible timing and latency options: Programmable CAS latency, additive latency and selectable burst lengths let designers tune memory timing to system needs.
• On-die termination and differential DQS support: Built-in features that aid signal integrity on high-speed DDR2 interfaces.
• Compact FBGA footprint: 84-ball FBGA (12 mm × 12.5 mm) reduces board area for dense system layouts.
• Commercial temperature rating: Specified 0°C to 85°C operating range for standard commercial deployments.

Why Choose MT47H32M16CC-3E:B?

The MT47H32M16CC-3E:B positions itself as a purpose-built 512 Mbit DDR2 SDRAM device for systems needing a parallel x16 DDR2 solution with programmable timing, on-die termination and differential strobe support. Its 1.8 V I/O compatibility, compact 84-ball FBGA package and documented timing grades make it suitable for board-level memory implementations where JEDEC DDR2 behavior and selectable performance options are required.

This device is well suited for designers and procurement teams focused on integrating a verified DDR2 memory component with clear electrical and timing specifications, compact packaging, and commercial temperature operation.

If you require pricing, availability or a formal quote for MT47H32M16CC-3E:B, submit a request for a quote or inquiry to your preferred distribution or procurement channel.