MT47H32M16CC-37E IT:B

The MT47H32M16CC-37E IT:B is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It implements DDR2 architecture features including a 4n-bit prefetch and internal banked operation to support concurrent access patterns.

Designed for industrial-temperature operation (–40°C to 95°C), the device operates from a 1.7 V to 1.9 V supply, supports JEDEC-standard 1.8 V I/O, and is supplied in an 84-ball FBGA (12 mm × 12.5 mm) package for compact memory subsystems.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a parallel memory interface for word/byte access.
• Performance & Timing Specified clock frequency 267 MHz, access time 500 ps and write cycle time (word page) of 15 ns. Programmable CAS latency and selectable burst lengths (4 or 8) provide timing flexibility.
• Power & I/O VDD and VDDQ operating range of 1.7 V to 1.9 V with JEDEC-standard 1.8 V SSTL_18-compatible I/O signaling.
• Signal Integrity & Data Path Differential data strobe (DQS/DQS#) option, DLL to align DQ/DQS with CK, and on-die termination (ODT) to support controlled signaling and timing alignment.
• Architecture & Reliability 4n-bit prefetch architecture, duplicate output strobe (RDQS) option (x8), and 4 internal banks for concurrent operation and predictable refresh behavior (8,192-cycle refresh).
• Package & Temperature Range 84-ball FBGA package (12 mm × 12.5 mm) with industrial temperature option rated for –40°C to 95°C (TC).
• Standards & Compliance JEDEC 1.8 V I/O compatibility and RoHS compliance as specified in the device documentation.

Typical Applications

• Industrial Systems Memory for industrial-temperature designs that require DDR2 SDRAM capable of operation from –40°C to 95°C.
• Compact Memory Subsystems High-density 512 Mbit storage in an 84-ball FBGA package for space-constrained board layouts.
• Legacy DDR2 Designs Drop-in DDR2 parallel memory option for designs requiring 32M × 16 organization and JEDEC-standard 1.8 V I/O.

Unique Advantages

• Industrial-temperature rating: Supports –40°C to 95°C operation, enabling use in extended-temperature environments.
• JEDEC-standard 1.8 V I/O: VDD/VDDQ support at 1.8 V ±0.1 V ensures compatibility with SSTL_18 signaling domains.
• Compact FBGA package: 84-ball FBGA (12 mm × 12.5 mm) provides a small footprint for high-density board designs.
• Flexible timing and access: Programmable CAS latency, selectable burst lengths, and a 4n-bit prefetch architecture allow tuning for system timing and throughput needs.
• Signal integrity features: On-die termination, DLL alignment, and optional differential DQS support improve timing alignment and reduce interfacing complexity.
• Documented vendor specification: Device features and timing are defined in the product documentation from the manufacturer, Micron Technology Inc.

Why Choose IC DRAM 512MBIT PAR 84FBGA?

The MT47H32M16CC-37E IT:B provides a 512 Mbit DDR2 SDRAM option in a compact 84-ball FBGA package with industrial-temperature capability and JEDEC-standard 1.8 V I/O. Its combination of programmable latency, burst options, on-die termination and DLL support delivers the timing flexibility and signal integrity features needed for reliably integrating DDR2 memory into embedded and industrial designs.

This device is suited for engineers specifying parallel DDR2 memory where compact packaging, industrial operating range, and vendor-documented timing and electrical characteristics are required. Use of this Micron-specified component supports consistent design documentation and reproducible memory subsystem behavior.

Request a quote or submit an RFQ to obtain pricing and availability for MT47H32M16CC-37E IT:B for your next design.