MT47H32M16CC-3:B TR

The MT47H32M16CC-3:B TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 in an 84-ball FBGA package. It implements DDR2 SDRAM architecture with a parallel memory interface and is designed for commercial-temperature systems (0°C to 85°C).

Key capabilities include a 1.8 V nominal supply range, DDR2 timing features such as programmable CAS latency and DLL alignment, and support for selectable burst lengths and on-die termination for synchronous high-speed operation.

Key Features

• Memory Type & Architecture DDR2 SDRAM, 512 Mbit organized as 32M × 16 with 4 internal banks and a 4n-bit prefetch architecture.
• Performance & Timing Clock frequency specified at 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns; programmable CAS latency and posted CAS additive latency are supported.
• Data Integrity & Interface Parallel memory interface with differential data strobe (DQS/DQS#) option and DLL to align DQ and DQS transitions with CK.
• Power & Voltage VDD = +1.8 V ±0.1 V (specified supply range 1.7 V to 1.9 V) with JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Burst & Refresh Selectable burst lengths of 4 or 8 and a 64 ms, 8,192-cycle refresh for retained data integrity.
• On-Die Features On-die termination (ODT) and adjustable data-output drive strength to optimize signal integrity.
• Package & Mounting 84-ball TFBGA (84-FBGA) package; supplier package dimensions listed as 84-FBGA (12 mm × 12.5 mm).
• Operating Temperature Commercial temperature range: 0°C to 85°C (T_C).

Typical Applications

• Commercial embedded systems — Provides 512 Mbit of parallel DDR2 memory in a compact 84-FBGA package for space-constrained commercial designs operating from 0°C to 85°C.
• Synchronous memory subsystems — Used where DDR2 timing features such as DLL, programmable CAS latency, and selectable burst lengths are required for aligned high-speed transfers.
• Board-level DRAM solutions — Offers x16 organization and on-die termination for integration into board designs requiring a parallel DDR2 SDRAM device at 1.8 V I/O levels.

Unique Advantages

• Dense x16 organization: 32M × 16 configuration delivers a 512 Mbit footprint suitable for mid-density memory requirements.
• JEDEC-compatible 1.8 V operation: Nominal VDD at +1.8 V ±0.1 V simplifies interface design with SSTL_18-compatible I/O.
• Signal integrity features: On-die termination and adjustable drive strength help optimize board-level signal integrity without external termination networks.
• Flexible timing control: Programmable CAS latency, DLL alignment, and selectable burst lengths (4 or 8) enable timing optimization for different system throughput needs.
• Compact FBGA package: 84-ball FBGA (12 mm × 12.5 mm) provides a small footprint for high-density board layouts.
• Robust refresh management: 64 ms, 8,192-cycle refresh supports standard DDR2 refresh requirements for reliable data retention.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16CC-3:B TR delivers a commercially rated DDR2 SDRAM solution with 512 Mbit density, programmable timing features, and signal-integrity options such as on-die termination and DLL alignment. Its 1.8 V supply and 84-FBGA package make it suitable for compact, board-level memory applications that require parallel DDR2 performance within a 0°C to 85°C operating range.

This device is appropriate for designers needing a mid-density DDR2 memory component with flexible timing control and integration-friendly package characteristics, offering predictable electrical and timing behavior tied directly to the provided specifications.

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