MT47H32M16CC-5E:B

The MT47H32M16CC-5E:B is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 SDRAM architecture with features drawn from Micron’s 512Mb DDR2 family, providing low-voltage operation and DDR2 signaling.

This device targets board-level designs that require a 512 Mbit DRAM in a compact 84-ball FBGA footprint, offering standard DDR2 features such as on-die termination, programmable CAS latency, and selectable burst lengths for system memory and buffering applications.

Key Features

• Core / Architecture DDR2 SDRAM architecture with 4 internal banks and a 4n-bit prefetch design as specified for Micron 512Mb DDR2 devices.
• Memory Organization 32M × 16 organization delivering 512 Mbit total capacity in a parallel DRAM format.
• Performance Clock frequency rated at 200 MHz with an access time of 600 ps; timing options include the -5E speed grade variant listed in the product designation.
• Interface & Signaling JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with differential data strobe options (DQS/DQS#) and DLL alignment of DQ/DQS to CK.
• Latency & Burst Programmable CAS latency, posted CAS additive latency, and selectable burst lengths of 4 or 8 for flexible read/write timing.
• Power VDD and VDDQ operating range of 1.7 V to 1.9 V for low-voltage DDR2 operation.
• Reliability & Refresh 64 ms, 8,192-cycle refresh and optional on-die termination (ODT) to support signal integrity and standard refresh requirements.
• Package 84-ball FBGA package (12 mm × 12.5 mm footprint) in an 84-TFBGA form factor as specified for the CC revision.
• Operating Temperature Commercial temperature range: 0 °C to 85 °C (T_C).

Typical Applications

• Board-level system memory — Use as a 512 Mbit DDR2 memory device for designs requiring a parallel DRAM interface and x16 data organization.
• Data buffering and temporary storage — Suitable for applications that need low-voltage DDR2 buffering and programmable latency options to match system timing.
• Compact module integration — Fits compact PCB layouts that require an 84-ball FBGA (12 mm × 12.5 mm) package for space-constrained designs.

Unique Advantages

• Standard DDR2 feature set: Implements JEDEC-standard 1.8 V I/O, DLL alignment, and ODT as documented in the Micron 512Mb DDR2 product family, enabling predictable DDR2 behavior.
• Flexible timing: Programmable CAS latency and selectable burst lengths allow designers to tune performance to match system timing and throughput needs.
• Low-voltage operation: VDD/VDDQ range of 1.7 V–1.9 V supports low-voltage DDR2 system designs and power budgeting.
• Compact FBGA package: 84-ball FBGA (12 mm × 12.5 mm) footprint provides a high-density package option for space-limited PCBs.
• Refresh and signal integrity features: 64 ms/8,192-cycle refresh and on-die termination options help maintain data integrity and simplify board-level termination strategies.

Why Choose MT47H32M16CC-5E:B?

The MT47H32M16CC-5E:B delivers a 512 Mbit DDR2 SDRAM solution combining standard DDR2 features, low-voltage operation, and an 84-ball FBGA package suitable for compact board-level memory implementations. Its 32M × 16 organization, programmable timing, and on-die termination options make it appropriate for designs that require configurable latency and reliable DDR2 signaling.

This device is well suited for engineers designing systems that need a verified DDR2 memory component with documented timing options, refresh behavior, and package specifications. It provides long-term design predictability through standardized DDR2 feature support and clear electrical/temperature operating ranges.

Request a quote or submit a pricing and availability inquiry to receive lead-time and procurement details for the MT47H32M16CC-5E:B.