MT47H32M16HR-25E IT:G TR

The MT47H32M16HR-25E IT:G TR is a 512 Mbit DDR2 SDRAM device manufactured by Micron Technology Inc. It is organized as 32M × 16 with a parallel memory interface and supports DDR2 operation.

This device provides 400 MHz clock operation with a 400 ps access time, low-voltage supply operation (1.7 V–1.9 V), and an extended operating temperature range of −40°C to 95°C, packaged in an 84-TFBGA form factor.

Key Features

• Memory Type & Architecture  512 Mbit DDR2 SDRAM organized as 32M × 16 for parallel memory architectures.
• Performance  Supports 400 MHz clock frequency and specifies 400 ps access time and 15 ns write cycle time (word page).
• Power  Operates from a 1.7 V to 1.9 V supply range, suitable for low-voltage DDR2 designs.
• Package  84-TFBGA package (supplier designation 84-FBGA, 8×12.5 mm footprint) for compact board-level integration.
• Temperature Range  Operates across −40°C to 95°C (TC), supporting extended temperature applications.
• Interface  Parallel memory interface with 16-bit data organization (×16) for system memory applications.

Typical Applications

• Volatile system memory  Used where a 512 Mbit parallel DDR2 DRAM is required for temporary data storage in embedded systems and boards.
• Board-level memory expansion  Deployed on PCBs that need a compact 84-TFBGA packaged DDR2 memory device with 32M × 16 organization.
• Industrial temperature systems  Applicable in designs that require operation across −40°C to 95°C while maintaining DDR2 performance.

Unique Advantages

• DDR2 operation at 400 MHz:  Provides defined high-frequency DDR2 timing with a specified 400 ps access time for deterministic memory performance.
• Compact BGA package:  84-TFBGA (84-FBGA, 8×12.5 mm) enables dense board layouts and space-saving memory placement.
• Low-voltage supply:  1.7 V–1.9 V operation reduces power envelope compared with higher-voltage memory alternatives where applicable.
• Parallel ×16 organization:  32M × 16 memory organization provides a straightforward 16-bit parallel interface for system integration.
• Extended operating temperature:  Rated from −40°C to 95°C to support designs exposed to a wide range of thermal conditions.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HR-25E IT:G TR is positioned for designs requiring a 512 Mbit DDR2 SDRAM in a compact 84-TFBGA package with defined timing characteristics (400 MHz clock, 400 ps access time, 15 ns write cycle). Its low-voltage operation (1.7 V–1.9 V) and −40°C to 95°C operating range make it suitable for systems that need predictable DDR2 memory behavior across varied conditions.

Designed and manufactured by Micron Technology Inc., this device fits applications that require a 32M × 16 parallel memory organization and compact packaging for board-level integration, delivering verifiable electrical and mechanical parameters for inclusion in system designs.

Request a quote or contact sales to discuss availability, pricing, and how the MT47H32M16HR-25E IT:G TR can meet your memory subsystem requirements.