MT47H32M16HR-25E L:G

The MT47H32M16HR-25E L:G is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface supplied in an 84-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and four internal banks to support standard DDR2 command/response timing and burst transfers.

This device targets designs that require a compact, parallel DDR2 memory component with 1.8 V class operation, programmable latency and selectable burst lengths for controlled throughput and timing behavior.

Key Features

• Memory Architecture  512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and 4n-bit prefetch architecture for standard DDR2 operation.
• Performance / Timing  Clock frequency specified at 400 MHz with an access time of 400 ps; programmable CAS latency and selectable burst lengths (4 or 8) to match system timing requirements.
• Power Supply  VDD = +1.8 V ±0.1 V (documented as 1.7 V–1.9 V supply range) supporting JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Signal Integrity  Built-in DLL to align DQ and DQS transitions with CK and on-die termination (ODT) to aid signal integrity on parallel interfaces.
• Data I/O  Differential data strobe (DQS/DQS#) option to support DDR2 data capture and timing alignment.
• Refresh and Reliability  64 ms, 8192-cycle refresh scheme as defined for the device family.
• Package and Mounting  84-ball TFBGA package (8 mm × 12.5 mm) in FBGA format for board-level mounting and compact footprint.
• Operating Temperature  Commercial temperature range documented at 0 °C to 85 °C (TC).
• Options and Family Features  Family-level options include adjustable data-output drive strength and support for JEDEC clock jitter specifications; industrial and automotive options are noted in the product family documentation.
• Standards Compliance  Device family supports JEDEC-standard 1.8 V I/O signaling and is listed as RoHS-compliant in the datasheet material for the DDR2 512Mb family.

Typical Applications

• Parallel DDR2 memory subsystems  Used where a 512 Mbit, x16 parallel DDR2 component is required for system memory implementations on PCBs with FBGA footprint constraints.
• Compact board-level integration  Suited to designs needing a high-density DRAM device in an 84-ball FBGA (8 mm × 12.5 mm) package.
• Timing-sensitive data buffering  Applicable in systems that leverage programmable CAS latency, selectable burst lengths and DLL alignment for controlled read/write timing.

Unique Advantages

• Standard DDR2 interface: Enables direct integration into designs requiring JEDEC 1.8 V DDR2 signaling and differential DQS-based data capture.
• Flexible timing and burst modes: Programmable CAS latency and selectable burst lengths (4 or 8) allow designers to tune latency and transfer granularity for target workloads.
• Signal integrity features: On-die termination (ODT) and an internal DLL help reduce board-level signal tuning and improve timing alignment between DQ/DQS and CK.
• Compact FBGA package: 84-ball FBGA (8 mm × 12.5 mm) reduces PCB area for space-constrained applications while providing the solder-ball connections standard for BGAs.
• 1.8 V low-voltage operation: Narrow supply range (1.7 V–1.9 V) with JEDEC I/O compatibility supports consistent power and I/O behavior across the memory interface.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HR-25E L:G provides a 512 Mbit DDR2 SDRAM solution that combines JEDEC-compatible 1.8 V signaling, programmable timing, on-die termination and an 84-ball FBGA package for compact board integration. Its 32M × 16 organization and four internal banks offer standard DDR2 banking and burst behavior suitable for parallel memory subsystems.

This device is aimed at designs that require a stable, documented DDR2 memory component with configurable timing and signal-integrity features. The product family documentation also outlines options for drive strength, temperature variants and other package revisions for customers needing extended configurations.

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