MT47H32M16HR-25E:G TR
| Part Description |
IC DRAM 512MBIT PARALLEL 84FBGA |
|---|---|
| Quantity | 1,202 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT47H32M16HR-25E:G TR – IC DRAM 512MBIT PARALLEL 84FBGA
The MT47H32M16HR-25E:G TR is a 512 Mbit volatile DRAM implemented as DDR2 SDRAM with a parallel memory interface. It is organized as 32M x 16 and packaged in an 84-TFBGA footprint for surface-mount board-level integration.
Designed for applications that require a compact, parallel DDR2 memory device, this part provides 400 MHz clock operation, a 400 ps access time, and a 1.7 V–1.9 V supply range to meet mid-range DDR2 performance and power requirements.
Key Features
- Memory Core DDR2 SDRAM technology in a 512 Mbit density organized as 32M x 16, implemented as DRAM (volatile).
- Interface Parallel memory interface suitable for designs that use parallel DDR2 memory topologies.
- Performance 400 MHz clock frequency with a 400 ps access time and a write cycle time (word page) of 15 ns to support DDR2 timing requirements.
- Power Operates from a 1.7 V to 1.9 V supply range.
- Package 84-TFBGA package (supplier device package: 84-FBGA, 8x12.5) for compact surface-mount applications.
- Operating Range Commercial temperature range rated at 0°C to 85°C (TC).
Typical Applications
- Parallel-memory systems — For designs requiring a 512 Mbit parallel DDR2 SDRAM organized as 32M x 16.
- High-frequency DDR2 modules — Suited to applications that use a 400 MHz DDR2 interface and require 400 ps access times.
- Board-level memory expansion — 84-TFBGA (84-FBGA, 8×12.5) package supports compact, surface-mounted memory integration.
Unique Advantages
- Compact BGA footprint: 84-TFBGA / 84-FBGA (8×12.5) package enables high-density placement on PCBs where board space is constrained.
- DDR2 timing capability: 400 MHz clock and 400 ps access time provide timing characteristics consistent with DDR2 system requirements.
- Convenient memory organization: 32M x 16 organization simplifies mapping for parallel memory interfaces.
- Low-voltage operation: 1.7 V–1.9 V supply range supports low-voltage DDR2 designs.
- Predictable cycle timing: 15 ns write cycle time (word page) provides a defined timing parameter for system design.
- Commercial temperature rating: 0°C–85°C (TC) suits typical commercial-grade deployments.
Why Choose MT47H32M16HR-25E:G TR?
The MT47H32M16HR-25E:G TR offers a straightforward DDR2 SDRAM option when a 512 Mbit parallel memory device is required. With a 32M x 16 organization, 400 MHz clock capability, and defined timing metrics, it fits designs that prioritize a compact BGA package and standard DDR2 electrical characteristics.
This part is appropriate for engineers and procurement teams specifying parallel DDR2 memory where predictable timing, low-voltage operation, and a compact 84-TFBGA footprint are key selection criteria.
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