MT47H32M16HR-25E:G TR

IC DRAM 512MBIT PARALLEL 84FBGA
Part Description

IC DRAM 512MBIT PARALLEL 84FBGA

Quantity 1,202 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time400 psGradeCommercial (Extended)
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT47H32M16HR-25E:G TR – IC DRAM 512MBIT PARALLEL 84FBGA

The MT47H32M16HR-25E:G TR is a 512 Mbit volatile DRAM implemented as DDR2 SDRAM with a parallel memory interface. It is organized as 32M x 16 and packaged in an 84-TFBGA footprint for surface-mount board-level integration.

Designed for applications that require a compact, parallel DDR2 memory device, this part provides 400 MHz clock operation, a 400 ps access time, and a 1.7 V–1.9 V supply range to meet mid-range DDR2 performance and power requirements.

Key Features

  • Memory Core DDR2 SDRAM technology in a 512 Mbit density organized as 32M x 16, implemented as DRAM (volatile).
  • Interface Parallel memory interface suitable for designs that use parallel DDR2 memory topologies.
  • Performance 400 MHz clock frequency with a 400 ps access time and a write cycle time (word page) of 15 ns to support DDR2 timing requirements.
  • Power Operates from a 1.7 V to 1.9 V supply range.
  • Package 84-TFBGA package (supplier device package: 84-FBGA, 8x12.5) for compact surface-mount applications.
  • Operating Range Commercial temperature range rated at 0°C to 85°C (TC).

Typical Applications

  • Parallel-memory systems — For designs requiring a 512 Mbit parallel DDR2 SDRAM organized as 32M x 16.
  • High-frequency DDR2 modules — Suited to applications that use a 400 MHz DDR2 interface and require 400 ps access times.
  • Board-level memory expansion — 84-TFBGA (84-FBGA, 8×12.5) package supports compact, surface-mounted memory integration.

Unique Advantages

  • Compact BGA footprint: 84-TFBGA / 84-FBGA (8×12.5) package enables high-density placement on PCBs where board space is constrained.
  • DDR2 timing capability: 400 MHz clock and 400 ps access time provide timing characteristics consistent with DDR2 system requirements.
  • Convenient memory organization: 32M x 16 organization simplifies mapping for parallel memory interfaces.
  • Low-voltage operation: 1.7 V–1.9 V supply range supports low-voltage DDR2 designs.
  • Predictable cycle timing: 15 ns write cycle time (word page) provides a defined timing parameter for system design.
  • Commercial temperature rating: 0°C–85°C (TC) suits typical commercial-grade deployments.

Why Choose MT47H32M16HR-25E:G TR?

The MT47H32M16HR-25E:G TR offers a straightforward DDR2 SDRAM option when a 512 Mbit parallel memory device is required. With a 32M x 16 organization, 400 MHz clock capability, and defined timing metrics, it fits designs that prioritize a compact BGA package and standard DDR2 electrical characteristics.

This part is appropriate for engineers and procurement teams specifying parallel DDR2 memory where predictable timing, low-voltage operation, and a compact 84-TFBGA footprint are key selection criteria.

Request a quote or submit an inquiry for MT47H32M16HR-25E:G TR to obtain pricing, availability, and lead-time information.

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