MT47H32M16HW-25E AAT:G TR

The MT47H32M16HW-25E AAT:G TR is a 512 Mbit DDR2 SDRAM organized as 32M x 16 with a parallel memory interface. It delivers DDR2-class operation with a 400 MHz clock frequency and a 400 ps access time for data buffering and high-throughput memory tasks.

Designed and qualified for automotive-grade environments (AEC-Q100) and an extended operating temperature range of -40°C to 105°C, this device targets embedded systems that require robust, low-voltage DDR2 memory in an 84-ball FBGA package.

Key Features

• Memory Core & Organization — DDR2 SDRAM organized as 32M x 16 providing 512 Mbit of volatile memory in a parallel DRAM format.
• Performance — 400 MHz clock frequency and 400 ps access time to support high-speed buffering and data transfer.
• Timing — Write cycle time (word page) specified at 15 ns for predictable write performance.
• Power — Operates from a 1.7 V to 1.9 V supply range, supporting low-voltage DDR2 system designs.
• Automotive Qualification & Temperature — AEC-Q100 qualification with an operating temperature range of -40°C to 105°C for automotive-grade reliability.
• Package — 84-TFBGA / 84-FBGA (8x12.5) supplier device package for compact board-level integration.
• Interface & Format — Parallel memory interface in DRAM format for integration with legacy and DDR2-compatible memory controllers.

Typical Applications

• Automotive electronic control units — Provides automotive-qualified volatile memory for control systems that require extended temperature operation and AEC-Q100 qualification.
• In-vehicle infotainment — High-frequency DDR2 operation supports data buffering and media handling in infotainment subsystems.
• Embedded memory buffers — Parallel DRAM organization and defined write cycle timing suit on-board buffering and temporary data storage in embedded designs.

Unique Advantages

• Automotive-qualified reliability: AEC-Q100 qualification combined with a -40°C to 105°C operating range addresses the environmental demands of automotive deployments.
• High-speed DDR2 performance: 400 MHz clock frequency and 400 ps access time enable fast data access for throughput-sensitive tasks.
• Low-voltage operation: 1.7 V to 1.9 V supply range supports power-sensitive system architectures.
• Deterministic timing: Specified 15 ns write cycle time (word page) aids predictable system timing and integration.
• Compact BGA footprint: Available in an 84-TFBGA / 84-FBGA (8x12.5) package for space-constrained board designs.
• Parallel DRAM interface: Straightforward integration with DDR2-compatible parallel memory controllers and legacy interfaces.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HW-25E AAT:G TR positions itself as a robust DDR2 memory component combining automotive-grade qualification, high-speed operation, and a compact FBGA package. Its 512 Mbit capacity, 32M × 16 organization, and defined timing characteristics make it suitable for embedded systems that require predictable DDR2 performance under extended temperature conditions.

Backed by Micron Technology Inc., this device is aimed at designers of automotive and embedded systems who need a qualified, low-voltage DDR2 DRAM option that balances performance, board-level density, and environmental robustness.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT47H32M16HW-25E AAT:G TR.