MT47H32M16HW-25E:G

The MT47H32M16HW-25E:G is a 512 Mbit volatile DRAM device implemented in DDR2 SDRAM technology with a parallel memory interface. It is organized as 32M × 16 and offered in an 84-TFBGA package, delivering 400 MHz clock operation and an access time of 400 ps for designs requiring DDR2-class system memory performance.

This device is suited for system designs that require a 512 Mbit DDR2 parallel DRAM implemented in a compact FBGA package, with specified operating voltage and temperature ranges for predictable integration.

Key Features

• Memory Type & Technology  DDR2 SDRAM volatile memory providing standard DDR2 architecture for parallel memory applications.
• Density & Organization  512 Mbit capacity organized as 32M × 16, enabling moderate-density memory implementations.
• Performance  400 MHz clock frequency with a 400 ps access time, supporting DDR2 timing requirements.
• Timing  Write cycle time (word page) specified at 15 ns for predictable write timing behavior.
• Power  Operates from a supply voltage range of 1.7 V to 1.9 V, compatible with DDR2 low-voltage operation.
• Package  84-TFBGA / 84-FBGA (8 × 12.5) package case for compact board-level integration.
• Environmental Range  Rated for operation from 0°C to 85°C (TC), supporting commercial temperature applications.
• Interface  Parallel memory interface provided for direct integration into DDR2 memory subsystems.

Typical Applications

• DDR2 memory subsystems  Used as a 512 Mbit DDR2 component in system-level memory arrays requiring a 32M × 16 organization and 400 MHz clocking.
• Embedded systems  Integrated into embedded designs that require parallel DDR2 DRAM capacity and standard timing characteristics within the specified voltage and temperature ranges.
• Board-level memory expansion  Employed on PCBs where a compact 84-FBGA package and 512 Mbit DDR2 memory are needed for space-constrained assemblies.

Unique Advantages

• Standard DDR2 technology:  Provides predictable DDR2 timing and behavior for designs targeting DDR2 parallel memory architectures.
• 400 MHz operation:  Supports higher-frequency DDR2 performance with a specified 400 ps access time for responsive memory access.
• Compact FBGA package:  84-TFBGA (84-FBGA, 8 × 12.5) packaging minimizes board footprint while maintaining robust mounting.
• Moderate density:  512 Mbit organized as 32M × 16 offers a balance of capacity and interface simplicity for many system needs.
• Low-voltage operation:  1.7 V to 1.9 V supply range aligns with DDR2 low-voltage power domains.
• Commercial temperature range:  0°C to 85°C operation supports typical commercial applications without additional derating information required.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HW-25E:G combines DDR2 SDRAM architecture, 400 MHz clock capability, and a 32M × 16 organization in a compact 84-TFBGA package, making it a straightforward choice for designs that require a 512 Mbit parallel DRAM element. Its specified access time, write cycle timing, supply voltage range, and operating temperature provide clear integration parameters for system and board-level engineers.

This device is appropriate for customers designing or maintaining systems that depend on DDR2 parallel memory density and timing characteristics, offering a defined set of electrical and mechanical specifications to support long-term design planning and implementation.

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