MT47H32M16HW-25E IT:G

The MT47H32M16HW-25E IT:G is a 512 Mbit DDR2 SDRAM device organized as 32M x 16 with a parallel memory interface. It implements DDR2 SDRAM architecture and supports operation at a 400 MHz clock frequency for high-speed memory access.

Designed for integration where a compact, high-frequency parallel DRAM is required, the device offers defined timing and power ranges that support system-level memory design and thermal considerations.

Key Features

• Memory Architecture 512 Mbit DDR2 SDRAM organized as 32M x 16, delivered in a parallel memory format.
• Performance 400 MHz clock frequency with a 400 ps access time to support high-speed data transfers.
• Timing Write cycle time (word page) specified at 15 ns for predictable write performance.
• Power Low-voltage operation with a supply range of 1.7 V to 1.9 V.
• Package 84-ball TFBGA (84-FBGA) package; supplier package specified as 84-FBGA (8x12.5).
• Operating Temperature Specified for -40°C to 95°C (TC) operation for use across a wide temperature span.
• Form Factor Standard DRAM memory format in an 84-TFBGA package for board-level integration.

Typical Applications

• Parallel memory subsystems Use as on-board DDR2 parallel memory in systems requiring a 512 Mbit DRAM device with defined timing.
• Embedded system memory Integration where a compact FBGA package and low-voltage DDR2 operation are needed for board space and power constraints.
• High-speed data buffering Suitable for designs that require 400 MHz clock operation and sub-nanosecond access timing for buffer or cache functions.

Unique Advantages

• Defined DDR2 performance: 400 MHz clock and 400 ps access time provide measurable high-speed memory characteristics for timing-sensitive designs.
• Compact FBGA packaging: 84-ball FBGA (8x12.5) package reduces board area while maintaining a standard footprint for integration.
• Low-voltage operation: 1.7 V to 1.9 V supply range supports lower-power memory designs compared to higher-voltage alternatives.
• Predictable write timing: 15 ns write cycle time (word page) helps systems meet deterministic write performance targets.
• Wide operating temperature: Rated from -40°C to 95°C (TC) to accommodate designs exposed to broad thermal environments.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HW-25E IT:G positions itself as a straightforward DDR2 SDRAM option for designs that need 512 Mbit capacity with a parallel interface, 400 MHz operation, and compact FBGA packaging. Its combination of defined timing characteristics and a low-voltage supply range supports integration into systems that require predictable memory performance and reduced power draw.

This device is appropriate for engineers specifying on-board DDR2 memory where package footprint, operating temperature range, and measurable timing (access and write cycle) are primary selection criteria.

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