MT47H32M16HR-3:G TR

The MT47H32M16HR-3:G TR is a 512 Mbit volatile DRAM device implemented in DDR2 SDRAM technology with a 32M × 16 memory organization and a parallel memory interface. Packaged in an 84-TFBGA (84-FBGA, 8x12.5) format, it provides high-frequency DDR2 operation with defined timing and voltage characteristics for system memory integration.

This device is intended for designs that require 512 Mbit of parallel DDR2 memory with specified performance metrics such as 333 MHz clock operation, 450 ps access time, and a supply voltage range of 1.7 V–1.9 V.

Key Features

• Core / Technology DDR2 SDRAM volatile memory delivering standard DDR2 architecture and parallel interface operation.
• Memory Capacity & Organization 512 Mbit total capacity arranged as 32M × 16 to support word/parallel access patterns.
• Performance Supports a 333 MHz clock frequency with an access time of 450 ps and a write cycle time (word page) of 15 ns for predictable timing characteristics.
• Power Operates over a supply voltage range of 1.7 V–1.9 V to match DDR2 low-voltage system rails.
• Package 84-TFBGA (supplier device package listed as 84-FBGA (8x12.5)) suitable for high-density board integration.
• Temperature Range Specified operating temperature from 0°C to 85°C (TC) for standard commercial-territory applications.
• Interface Parallel memory interface compatible with DDR2 memory controller designs.

Typical Applications

• Parallel DDR2 system memory — Used where 512 Mbit of DDR2 parallel DRAM is required for temporary storage and working memory in digital systems.
• On-board buffering and working storage — Provides volatile buffering capacity for controllers and data paths that use parallel DDR2 memory.
• Embedded device memory — Integration into embedded systems that require a compact FBGA package and defined DDR2 timing.

Unique Advantages

• High-frequency DDR2 operation: 333 MHz clocking supports applications that need higher-speed DDR2 performance.
• Compact FBGA packaging: 84-TFBGA / 84-FBGA (8x12.5) reduces PCB footprint while providing standard solderable format for board-level assembly.
• Defined timing characteristics: 450 ps access time and 15 ns write cycle time (word page) enable predictable memory timing for system design.
• Low-voltage operation: 1.7 V–1.9 V supply range aligns with DDR2 low-voltage requirements to match system power rails.
• Clear operating temperature spec: 0°C to 85°C (TC) allows selection for commercial-temperature-range designs.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HR-3:G TR positions itself as a straightforward 512 Mbit DDR2 parallel DRAM option combining mid-density capacity, defined timing, and a compact FBGA package. Its 32M × 16 organization, 333 MHz clock capability, and low-voltage operation make it suitable for designs that require predictable DDR2 memory behavior in a solderable BGA footprint.

This device is appropriate for engineers specifying parallel DDR2 memory where capacity, timing, package density, and commercial operating temperature are primary selection criteria.

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