MT47H32M16HR-25E:G
| Part Description |
IC DRAM 512MBIT PARALLEL 84FBGA |
|---|---|
| Quantity | 1,115 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT47H32M16HR-25E:G – IC DRAM 512MBIT PARALLEL 84FBGA
The MT47H32M16HR-25E:G is a volatile DDR2 SDRAM device providing 512 Mbit of parallel DRAM organized as 32M × 16. It implements DDR2 architecture with a parallel memory interface in an 84-ball FBGA package.
Key electrical and timing characteristics include a 400 MHz clock frequency, 400 ps access time, 15 ns write cycle time for word page operations, and a supply voltage range of 1.7 V to 1.9 V, with an operating temperature range of 0°C to 85°C (TC).
Key Features
- Memory Type and Organization DDR2 SDRAM, volatile memory organized as 32M × 16 delivering a total of 512 Mbit.
- Performance 400 MHz clock frequency with a 400 ps access time and 15 ns write cycle time (word page).
- Power Operates from a 1.7 V to 1.9 V supply voltage range.
- Package 84-TFBGA / 84-FBGA package with an 8 × 12.5 mm ball array footprint.
- Interface Parallel memory interface for conventional DDR2 system integration.
- Environmental Range Specified operating temperature range: 0°C to 85°C (TC).
- Memory Format DRAM (volatile) device intended for parallel DDR2 memory applications.
Unique Advantages
- Standard DDR2 timing characteristics: 400 MHz clock and 400 ps access time provide clearly defined DDR2 timing for system designers.
- 512 Mbit capacity in 32M × 16 organization: Fixed memory organization simplifies addressing and memory map planning in parallel systems.
- Narrow supply range: 1.7 V to 1.9 V operation aligns with systems designed for DDR2 voltage domains.
- FBGA package footprint: 84-FBGA (8 × 12.5 mm) package provides a defined ball-count and footprint for PCB layout and assembly processes.
- Specified commercial temperature range: 0°C to 85°C (TC) supports a range of temperature environments consistent with commercial-grade designs.
Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?
The MT47H32M16HR-25E:G positions itself as a straightforward 512 Mbit DDR2 parallel DRAM option with explicit electrical and timing specifications—400 MHz clock, 400 ps access time, 15 ns write cycle time, and a 1.7 V–1.9 V supply window—paired with an 84-ball FBGA package (8 × 12.5 mm). Those attributes make it suitable for designs that require a defined DDR2 memory device with standard timing and packaging.
This device is appropriate for engineers and procurement teams specifying a 512 Mbit DDR2 DRAM with a parallel interface and commercial temperature rating, providing a clear set of parameters for system integration and layout planning.
Please request a quote or contact sales to discuss pricing, availability, and ordering for the MT47H32M16HR-25E:G.