MT47H32M16HR-25E:G

IC DRAM 512MBIT PARALLEL 84FBGA
Part Description

IC DRAM 512MBIT PARALLEL 84FBGA

Quantity 1,115 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time400 psGradeCommercial (Extended)
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT47H32M16HR-25E:G – IC DRAM 512MBIT PARALLEL 84FBGA

The MT47H32M16HR-25E:G is a volatile DDR2 SDRAM device providing 512 Mbit of parallel DRAM organized as 32M × 16. It implements DDR2 architecture with a parallel memory interface in an 84-ball FBGA package.

Key electrical and timing characteristics include a 400 MHz clock frequency, 400 ps access time, 15 ns write cycle time for word page operations, and a supply voltage range of 1.7 V to 1.9 V, with an operating temperature range of 0°C to 85°C (TC).

Key Features

  • Memory Type and Organization DDR2 SDRAM, volatile memory organized as 32M × 16 delivering a total of 512 Mbit.
  • Performance 400 MHz clock frequency with a 400 ps access time and 15 ns write cycle time (word page).
  • Power Operates from a 1.7 V to 1.9 V supply voltage range.
  • Package 84-TFBGA / 84-FBGA package with an 8 × 12.5 mm ball array footprint.
  • Interface Parallel memory interface for conventional DDR2 system integration.
  • Environmental Range Specified operating temperature range: 0°C to 85°C (TC).
  • Memory Format DRAM (volatile) device intended for parallel DDR2 memory applications.

Unique Advantages

  • Standard DDR2 timing characteristics: 400 MHz clock and 400 ps access time provide clearly defined DDR2 timing for system designers.
  • 512 Mbit capacity in 32M × 16 organization: Fixed memory organization simplifies addressing and memory map planning in parallel systems.
  • Narrow supply range: 1.7 V to 1.9 V operation aligns with systems designed for DDR2 voltage domains.
  • FBGA package footprint: 84-FBGA (8 × 12.5 mm) package provides a defined ball-count and footprint for PCB layout and assembly processes.
  • Specified commercial temperature range: 0°C to 85°C (TC) supports a range of temperature environments consistent with commercial-grade designs.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HR-25E:G positions itself as a straightforward 512 Mbit DDR2 parallel DRAM option with explicit electrical and timing specifications—400 MHz clock, 400 ps access time, 15 ns write cycle time, and a 1.7 V–1.9 V supply window—paired with an 84-ball FBGA package (8 × 12.5 mm). Those attributes make it suitable for designs that require a defined DDR2 memory device with standard timing and packaging.

This device is appropriate for engineers and procurement teams specifying a 512 Mbit DDR2 DRAM with a parallel interface and commercial temperature rating, providing a clear set of parameters for system integration and layout planning.

Please request a quote or contact sales to discuss pricing, availability, and ordering for the MT47H32M16HR-25E:G.

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