MT47H32M16HR-3:G

The MT47H32M16HR-3:G is a 512 Mbit volatile DRAM device implemented in DDR2 SDRAM architecture. It provides a 32M × 16 memory organization with a parallel memory interface and a 84-TFBGA package footprint.

Designed for systems requiring DDR2 parallel memory at a 333 MHz clock frequency, the device delivers specified timing characteristics and a defined operating range to support integration into a variety of electronic designs.

Key Features

• Memory Technology DDR2 SDRAM volatile memory providing 512 Mbit of storage in a 32M × 16 organization.
• Performance 333 MHz clock frequency with a 450 ps access time and a 15 ns write cycle time (word page) to define operational timing.
• Interface Parallel memory interface suitable for systems designed around DDR2 parallel signaling and x16 data width.
• Voltage Operates from 1.7 V to 1.9 V supply, matching DDR2 power domain requirements.
• Package Supplied in an 84-TFBGA / 84-FBGA (8 × 12.5 mm) package for compact board-level integration.
• Operating Range Specified for an operating temperature range of 0°C to 85°C (TC), supporting standard commercial-temperature applications.
• Memory Format DRAM organized as 32M × 16 suitable for system memory implementations requiring this density and data width.

Typical Applications

• Embedded system memory — Provides 512 Mbit DDR2 parallel memory for embedded platforms that use x16 memory organization and require defined timing at 333 MHz.
• Consumer electronics — Integration into consumer devices that use parallel DDR2 memory footprints and require a compact 84-FBGA package.
• Industrial control — Use in industrial designs operating within a 0°C to 85°C temperature range where DDR2 parallel memory is specified.

Unique Advantages

• Established DDR2 architecture: Clear DDR2 SDRAM implementation with 32M × 16 organization for predictable integration into DDR2-based systems.
• Defined timing performance: 333 MHz clock frequency, 450 ps access time, and 15 ns write cycle time provide explicit timing metrics for system designers.
• Low-voltage operation: 1.7 V to 1.9 V supply range aligns with DDR2 power requirements and supports consistent power planning.
• Compact FBGA footprint: 84-TFBGA / 84-FBGA (8 × 12.5 mm) package supports space-constrained board layouts.
• Commercial temperature rating: Specified 0°C to 85°C operating range for designs targeting standard commercial environments.

Why Choose MT47H32M16HR-3:G?

The MT47H32M16HR-3:G positions itself as a straightforward DDR2 DRAM option for designs that require a 512 Mbit, x16 parallel memory solution with explicit timing and supply parameters. Its combination of a defined 333 MHz clock, documented access/write timings, and a compact 84-FBGA package makes it suitable for engineers integrating DDR2 memory into commercial electronic products.

This device is appropriate for development teams and procurement focused on systems that need a known DDR2 memory density, voltage range, and operating temperature window, offering predictable integration and clear electrical/timing specifications.

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