MT47H32M16HR-25E L:G TR

The MT47H32M16HR-25E L:G TR is a 512 Mbit volatile DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface. It is supplied in an 84-ball FBGA package and operates from a 1.7 V to 1.9 V supply.

This device targets systems that require DDR2 SDRAM memory with a 400 MHz clock capability, offering compact board-level integration and defined commercial operating temperature range of 0°C to 85°C.

Key Features

• Memory Type & Technology  DDR2 SDRAM volatile memory delivering 512 Mbit density organized as 32M × 16 for parallel memory applications.
• Performance  400 MHz clock frequency with an access time of 400 ps to support systems requiring this timing class.
• Timing  Write cycle time (word page) specified at 15 ns, suitable for designs that reference this timing parameter.
• Voltage  Low-voltage operation with a specified supply range of 1.7 V to 1.9 V.
• Package  Supplied in an 84-TFBGA package; supplier package listed as 84-FBGA (8×12.5), enabling compact board footprint.
• Operating Temperature  Commercial temperature range specified from 0°C to 85°C (TC).
• Interface  Parallel memory interface for conventional DDR2 bus integration.

Unique Advantages

• Defined DDR2 performance: 400 MHz clock and 400 ps access time provide predictable timing characteristics for systems designed around this DDR2 class.
• Compact FBGA packaging: 84-ball FBGA (84-TFBGA / 84-FBGA 8×12.5) supports area-constrained board designs while preserving parallel memory connectivity.
• Mid-range temperature support: Specified 0°C to 85°C operating range fits commercial-grade applications requiring stable operation within these limits.
• Low-voltage operation: 1.7 V–1.9 V supply reduces system power domain requirements compared to higher-voltage alternatives.
• Clear timing specification: 15 ns write cycle time (word page) helps in system timing analysis and memory subsystem integration.

Why Choose MT47H32M16HR-25E L:G TR?

The MT47H32M16HR-25E L:G TR positions itself as a straightforward DDR2 SDRAM option for designs requiring a 512 Mbit parallel memory device with defined timing and low-voltage operation. Its 32M × 16 organization, 400 MHz clock capability, and specified access and cycle timings make it suitable for systems that reference these DDR2 performance parameters.

Manufactured by Micron Technology Inc., this device provides a compact 84-ball FBGA footprint and a commercial operating temperature range, delivering a balance of density, timing clarity, and board-level integration for engineers specifying DDR2 memory in their designs.

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