MT47H32M16HR-25E AIT:G TR

The MT47H32M16HR-25E AIT:G TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It delivers high-speed, volatile DRAM storage in a compact 84-TFBGA package for embedded and automotive-grade designs.

Designed for applications that require AEC-Q100 qualification and extended temperature operation, the device combines a 400 MHz clock capability with low-voltage operation to address performance and environmental robustness requirements.

Key Features

• Memory Core & Architecture  DDR2 SDRAM, 512 Mbit capacity arranged as 32M × 16 with a parallel memory interface suitable for standard DDR2 controllers.
• Performance  400 MHz clock frequency with 400 ps access time and a write cycle time (word/page) of 15 ns to support fast memory transactions.
• Power  Low-voltage operation with a supply range of 1.7 V to 1.9 V to help manage system power budgets.
• Qualification & Grade  AEC-Q100 qualification and specified as an Automotive grade device for designs requiring automotive-level component qualification.
• Operating Range  Rated for operation from -40°C to 95°C (TC), supporting wide-temperature environments.
• Package & Mounting  Available in an 84-TFBGA package (supplier package: 84-FBGA, 8×12.5) for compact board-level integration; surface-mount volatile DRAM format.
• Memory Format  Volatile DRAM providing temporary working memory for system applications.

Typical Applications

• Automotive systems  AEC-Q100 qualification and a -40°C to 95°C operating range make this DDR2 device suitable for automotive electronic subsystems requiring robust volatile memory.
• Embedded control  Provides 512 Mbit of parallel DDR2 memory for embedded controllers and processors that need fast external working memory.
• Industrial equipment  Wide temperature tolerance and low-voltage operation support use in industrial control systems operating in challenging environments.

Unique Advantages

• AEC-Q100 qualified: Confirms qualification for automotive applications where component-level automotive qualification is required.
• Wide temperature capability: Rated from -40°C to 95°C to support deployment in harsh and variable environments.
• High-speed DDR2 performance: 400 MHz clock and 400 ps access time enable rapid data access for performance-sensitive tasks.
• Compact BGA package: 84-TFBGA (84-FBGA 8×12.5) offers a small PCB footprint while delivering parallel memory connectivity.
• Low-voltage operation: 1.7 V–1.9 V supply range reduces system power draw compared with higher-voltage alternatives.
• Standard memory organization: 32M × 16 configuration simplifies integration with parallel DDR2 memory controllers.

Why Choose MT47H32M16HR-25E AIT:G TR?

The MT47H32M16HR-25E AIT:G TR positions itself as a performance-oriented, automotive-qualified DDR2 memory building block that balances speed, low-voltage operation, and wide-temperature robustness. Its 512 Mbit capacity and 32M × 16 organization provide a straightforward memory option for systems requiring parallel DDR2 DRAM.

Ideal for designers of automotive, embedded, and industrial electronics who need AEC-Q100 qualified volatile memory with compact packaging and clear electrical and timing characteristics. Backed by Micron Technology Inc., the device offers a defined specification set for integration into long-life, robust designs.

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