MT47H32M16NF-187E:H
| Part Description |
IC DRAM 512MBIT PAR 84FBGA |
|---|---|
| Quantity | 59 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 350 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 533 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT47H32M16NF-187E:H – IC DRAM 512MBIT PAR 84FBGA
The MT47H32M16NF-187E:H is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 and supplied in an 84-TFBGA package. It provides a parallel memory interface with a 533 MHz clock frequency, 350 ps access time and a write cycle time (word page) of 15 ns.
The device operates from a 1.7 V to 1.9 V supply and is specified for an operating temperature range of 0°C to 85°C (TC), making it suitable for systems that require DDR2 parallel DRAM with defined performance and thermal characteristics.
Key Features
- Memory Technology DDR2 SDRAM volatile memory, organized as 32M × 16 for a total capacity of 512 Mbit.
- Performance 533 MHz clock frequency with a 350 ps access time and 15 ns write cycle time (word page) for measured read/write timing.
- Interface Parallel memory interface compatible with parallel DDR2 implementations.
- Power Operates from a 1.7 V to 1.9 V supply voltage.
- Package 84-TFBGA (84-FBGA, 8×12.5) ball grid array package case for BGA mounting.
- Operating Temperature Specified temperature range of 0°C to 85°C (TC).
Typical Applications
- Embedded systems Provides 512 Mbit DDR2 SDRAM in a 32M × 16 organization for embedded designs requiring parallel DRAM memory.
- Consumer electronics Delivers DDR2 memory capacity and 533 MHz operation for consumer products that integrate parallel SDRAM components.
- Communication equipment Suitable as parallel DDR2 memory in communication systems where the specified timing and voltage range align with system requirements.
Unique Advantages
- Balanced density and organization: 512 Mbit capacity with 32M × 16 organization provides defined density for mid-range memory needs.
- Defined high-speed timing: 533 MHz clocking and 350 ps access time give clear, verifiable timing characteristics for system timing budgets.
- Low-voltage DDR2 operation: 1.7 V to 1.9 V supply range supports DDR2 low-voltage system designs.
- BGA form factor: 84-TFBGA / 84-FBGA (8×12.5) package supports BGA mounting and standard footprint integration.
- Commercial temperature rating: Specified 0°C to 85°C operating range aligns with commercial-grade applications.
- Parallel interface compatibility: Native parallel DDR2 interface simplifies integration into parallel memory architectures.
Why Choose MT47H32M16NF-187E:H?
The MT47H32M16NF-187E:H is positioned for designs that require a 512 Mbit DDR2 SDRAM with clearly specified timing, voltage, package, and temperature characteristics. Its 32M × 16 organization, 533 MHz clocking, and 84-FBGA package present a straightforward option for systems designed around parallel DDR2 memory.
This device is suited to customers and designs that need documented DDR2 performance metrics (access time, write cycle time), a defined commercial temperature range, and a compact BGA package for board-level integration.
Request a quote or submit an inquiry to receive pricing and availability information for the MT47H32M16NF-187E:H.
