MT47H32M16NF-25E AIT:H

The MT47H32M16NF-25E AIT:H is a 512 Mbit parallel DRAM device implemented in DDR2 SDRAM architecture with a 32M × 16 memory organization. Packaged in an 84-TFBGA (84-FBGA, 8×12.5) footprint and manufactured by Micron Technology Inc., it provides DDR2 memory functionality for systems requiring AEC‑Q100 qualified components.

This device targets designs that require a 1.7–1.9 V DDR2 memory solution with a 400 MHz clock capability, an access time of 400 ps, and an extended operating temperature range of -40°C to 95°C (TC).

Key Features

• Memory Core DDR2 SDRAM architecture with a memory organization of 32M × 16, delivering a total memory size of 512 Mbit.
• Interface Parallel DRAM interface suitable for systems designed around DDR2 signaling and timing.
• Performance 400 MHz clock frequency and 400 ps access time support DDR2 timing requirements; write cycle time (word page) specified at 15 ns.
• Power Operates from a 1.7 V to 1.9 V supply range.
• Package 84-TFBGA / 84-FBGA (8×12.5) package case for compact board-level integration.
• Temperature & Qualification Operating temperature range of -40°C to 95°C (TC) and AEC‑Q100 qualification indicate suitability for applications demanding qualified components.

Typical Applications

• Automotive systems — AEC‑Q100 qualification and an automotive grade designation support use in vehicle electronics that require qualified DDR2 memory components.
• DDR2 memory subsystems — Acts as a 512 Mbit parallel DDR2 DRAM device within board-level memory designs requiring a 32M × 16 organization.
• Temperature-challenged environments — Specified -40°C to 95°C operating range for designs exposed to extended temperature conditions.

Unique Advantages

• AEC‑Q100 qualified Provides component-level qualification for applications requiring that industry-standard reliability metric.
• <strong.Automotive grade Explicit automotive grade designation supports integration into automotive-focused designs.
• Compact BGA footprint 84-FBGA (8×12.5) package enables dense board integration while preserving the 32M × 16 memory organization.
• <strong.DDR2 timing support 400 MHz clock frequency, 400 ps access time and 15 ns write cycle time (word page) provide deterministic DDR2 timing characteristics.
• <strong.Wide supply tolerance 1.7 V to 1.9 V supply range accommodates standard DDR2 power rails.

Why Choose MT47H32M16NF-25E AIT:H?

The MT47H32M16NF-25E AIT:H combines a 512 Mbit DDR2 SDRAM organization with AEC‑Q100 qualification and an extended -40°C to 95°C operating range, positioning it for designs that require qualified DDR2 memory in a compact BGA package. Its specified clock, access time, and write cycle timing provide clear, verifiable DDR2 performance characteristics for system integration.

Manufactured by Micron Technology Inc., this device is suited for engineers and procurement teams specifying a 32M × 16, 512 Mbit parallel DRAM where AEC‑Q100 qualification, defined voltage range, and an 84-FBGA footprint are required.

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