MT47H32M16NF-25E AUT:H

The MT47H32M16NF-25E AUT:H is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-TFBGA package. It provides high-speed synchronous DRAM operation with a 400 MHz clock frequency and a 400 ps access time.

Designed and qualified for automotive use, the device targets applications requiring DDR2 parallel memory with extended temperature capability and AEC-Q100 qualification, delivering predictable electrical and thermal characteristics for demanding environments.

Key Features

• Memory Core 512 Mbit DRAM organized as 32M × 16, providing a parallel DDR2 memory architecture for systems that require synchronous DRAM.
• Performance 400 MHz clock frequency and 400 ps access time, with a write cycle time (word/page) of 15 ns to support high-speed memory transactions.
• Voltage Nominal supply range of 1.7 V to 1.9 V, matching DDR2 power requirements for compatible system designs.
• Package 84-TFBGA (84-FBGA footprint, 8 × 12.5 mm) compact ball-grid array packaging for board-level integration where space and thermal characteristics are considerations.
• Temperature & Qualification Operating temperature range of −40 °C to 125 °C (TC) and AEC-Q100 qualification, indicating suitability for automotive-grade deployment.
• Interface Parallel DDR2 memory interface optimized for synchronous operation in systems using standard parallel DRAM signaling.

Typical Applications

• Automotive Electronic Control Modules — Use as vehicle-level DDR2 working memory where AEC-Q100 qualification and extended temperature operation are required.
• Embedded Systems with Parallel DDR2 Memory — Provide synchronous DRAM capacity for designs that require a 32M × 16 organization and parallel interface.
• High-Temperature Environments — Deploy in systems operating across −40 °C to 125 °C where thermal robustness is necessary.

Unique Advantages

• AEC-Q100 Qualified: Built to an automotive qualification standard, supporting use in automotive-grade designs.
• Wide Operating Temperature: −40 °C to 125 °C operating range for reliability in harsh thermal conditions.
• High-Speed DDR2 Performance: 400 MHz clock and 400 ps access time enable fast synchronous memory operations for parallel DDR2 architectures.
• Compact BGA Package: 84-TFBGA (84-FBGA, 8 × 12.5 mm) offers a small footprint for space-constrained board layouts.
• Automotive-Grade Voltage Range: 1.7 V to 1.9 V supply aligns with DDR2 power domains in automotive and industrial systems.

Why Choose MT47H32M16NF-25E AUT:H?

The MT47H32M16NF-25E AUT:H positions itself as a robust DDR2 parallel DRAM solution combining 512 Mbit density with high-speed operation and automotive-grade qualification. Its 32M × 16 organization, 400 MHz clock rate, and compact 84-TFBGA package make it suitable for designs that require synchronous DRAM performance within constrained board areas.

With AEC-Q100 qualification and an extended −40 °C to 125 °C operating range, this device is appropriate for automotive and other applications demanding thermal and electrical reliability. The specified supply voltage and timing parameters allow deterministic integration into systems designed for DDR2 memory interfaces.

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