MT47H32M16NF-25E AIT:H TR

The MT47H32M16NF-25E AIT:H TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It provides DDR2-class performance with a 400 MHz clock frequency and is supplied in a compact 84‑FBGA package.

This device is targeted at systems requiring high-speed volatile memory in a small footprint and is qualified to AEC‑Q100 for automotive-grade applications. Typical use includes embedded and automotive systems where controlled operating voltage and temperature range are required.

Key Features

• Memory Type & Architecture DDR2 SDRAM, organized as 32M × 16 for a total capacity of 512 Mbit; parallel interface for traditional SDRAM system integration.
• Performance 400 MHz clock frequency with a 400 ps access time and a 15 ns write cycle time (word page), supporting high-speed read/write operations.
• Power Low-voltage operation at 1.7 V to 1.9 V for reduced supply requirements and compatibility with low‑voltage systems.
• Package 84‑TFBGA (84‑FBGA, 8 × 12.5 mm) package offering a compact footprint for board space‑constrained designs.
• Reliability & Grade AEC‑Q100 qualification and specified operating ambient temperature from −40 °C to 85 °C (TA), supporting automotive-grade deployment.
• Memory Format & Mounting Volatile DRAM memory format intended for temporary data storage in system memory applications.

Typical Applications

• Automotive systems — Suitable for in-vehicle applications requiring AEC‑Q100 qualification and operation across −40 °C to 85 °C ambient temperatures.
• Embedded controllers — Provides parallel DDR2 memory for embedded processors and microcontrollers needing a 512 Mbit volatile memory resource.
• Industrial equipment — Used in control and monitoring systems where a compact, automotive‑grade DDR2 memory device is required.
• Communication and networking modules — Acts as high-speed temporary storage for data buffering and packet processing in space-constrained modules.

Unique Advantages

• Automotive-qualified component: AEC‑Q100 qualification and an automotive grade designation align the device with vehicle-level requirements.
• High-speed DDR2 interface: 400 MHz clock and 400 ps access time deliver DDR2 performance for demanding memory transactions.
• Compact BGA footprint: 84‑FBGA (8 × 12.5 mm) package reduces board area while supporting BGA assembly.
• Low-voltage operation: 1.7 V–1.9 V supply range minimizes power supply overhead in low-voltage system designs.
• Predictable timing: 15 ns write cycle time (word page) provides explicit timing characteristics for system memory timing budgets.
• Wide ambient temperature range: −40 °C to 85 °C (TA) supports deployment across a broad set of environmental conditions.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16NF-25E AIT:H TR combines DDR2-class speed, a 512 Mbit capacity, and an 84‑FBGA package in an AEC‑Q100 qualified device, making it appropriate for designs that require automotive‑grade volatile memory in a compact form factor. Its defined timing and low-voltage operation help simplify integration into systems with constrained power and board space.

This device is well suited for engineers designing embedded, automotive, and industrial systems that need predictable DDR2 performance, automotive qualification, and a small BGA footprint. The combination of specified operating temperature, voltage range, and package dimensions supports reliable, long-term deployment in qualifying applications.

If you require pricing, lead-time, or availability details, request a quote or contact the sales team to discuss your requirements and obtain a formal quotation.