MT47H32M16NF-25E AUT:H TR

IC DRAM 512MBIT PARALLEL 84FBGA
Part Description

IC DRAM 512MBIT PARALLEL 84FBGA

Quantity 327 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time400 psGradeAutomotive
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 125°C (TC)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0028

Overview of MT47H32M16NF-25E AUT:H TR – 512 Mbit DDR2 SDRAM, 84-FBGA

The MT47H32M16NF-25E AUT:H TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It provides DDR2-class performance with a 400 MHz clock frequency and 400 ps access time for designs that require fast, volatile off-chip memory.

Targeted at applications requiring extended temperature range and automotive qualification, this device offers AEC-Q100 qualification and an operating temperature range of −40°C to 125°C, along with a compact 84-FBGA (8 × 12.5 mm) package.

Key Features

  • Memory Type & Organization 512 Mbit DRAM organized as 32M × 16 in a parallel interface format for standard DDR2 memory configurations.
  • Performance 400 MHz clock frequency and 400 ps access time deliver DDR2-class data throughput; write cycle time (word/page) specified at 15 ns.
  • Power Operates from a 1.7 V to 1.9 V supply window consistent with DDR2 voltage requirements.
  • Reliability & Qualification AEC-Q100 qualification and an operating temperature range of −40°C to 125°C support deployment in thermally demanding and qualified systems.
  • Package 84-TFBGA / 84-FBGA package (8 × 12.5 mm) provides a compact surface-mount footprint for space-constrained designs.
  • Memory Interface Parallel DDR2 interface for integration with processors and memory controllers that accept parallel SDRAM signaling.

Typical Applications

  • Automotive control modules — Memory for vehicle electronic control units where AEC-Q100 qualification and extended temperature range are required.
  • Embedded systems — Off-chip volatile memory for embedded processors and controllers that need parallel DDR2 SDRAM.
  • High-temperature electronics — Systems operating across −40°C to 125°C that require a qualified DRAM solution in a compact FBGA package.

Unique Advantages

  • AEC-Q100 Qualified: Explicit qualification for automotive applications supports use in regulated and reliability-focused designs.
  • Extended Temperature Range: −40°C to 125°C operating range provides robustness for harsh environments.
  • Compact FBGA Package: 84-FBGA (8 × 12.5 mm) minimizes board area while providing full DDR2 functionality.
  • DDR2 Performance: 400 MHz clock and 400 ps access time enable high-speed data buffering and system memory needs.
  • Wide Supply Window: 1.7 V to 1.9 V supply supports typical DDR2 power domains and design flexibility.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16NF-25E AUT:H TR combines DDR2 performance with automotive-grade qualification and an extended temperature range, making it suitable for designs that demand both speed and robustness. Its 32M × 16 organization and parallel interface simplify integration into systems that rely on standard DDR2 memory architectures.

This device is appropriate for engineers specifying a compact, qualified DRAM solution where board space, thermal endurance, and adherence to automotive qualification are important considerations.

Request a quote or contact sales to discuss availability, pricing, and volume options for the MT47H32M16NF-25E AUT:H TR.

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