MT47H32M16NF-25E:H TR

The MT47H32M16NF-25E:H TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It delivers DDR2-class memory architecture with a 4n-bit prefetch design, targeting embedded and automotive electronic modules that require compact, qualified DRAM for system memory and buffering.

With a 1.7 V–1.9 V supply range, 400 MHz clock capability, and AEC‑Q100 qualification, this device is offered for designs requiring automotive-grade qualification and DDR2 performance in a small 8 mm × 12.5 mm FBGA footprint.

Key Features

• Memory Architecture  512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4n-bit prefetch architecture for DDR2 operation.
• Performance  Supports a 400 MHz clock rate and an access time of 400 ps with selectable burst lengths (4 or 8) and programmable CAS latency.
• Timing  Write cycle time (word page) of 15 ns and JEDEC-standard timing options including programmable CAS and additive latency.
• Power  Operates from a 1.7 V to 1.9 V supply (VDD and VDDQ), providing standard DDR2 1.8 V I/O compatibility.
• Interface  Parallel memory interface with differential data strobe (DQS/DQS#) options and DLL to align DQ/DQS with CK.
• Package  84-ball thin FBGA (8 mm × 12.5 mm) package suitable for compact board designs and high-density routing.
• Operating Range & Qualification  Commercial operating temperature range of 0 °C to +85 °C (TC) and AEC‑Q100 qualification for automotive-grade applications.
• System Reliability  On-die termination (ODT), selectable data-output drive strength and support for standard refresh cycles (8192-cycle refresh) to maintain signal integrity and data retention.

Typical Applications

• Automotive Electronic Modules  Memory and buffering for control units and infotainment subsystems where AEC‑Q100 qualification is required.
• Embedded Systems  System memory and high-speed data buffering for compact embedded boards using a parallel DDR2 interface.
• Consumer and Industrial Equipment  Low-voltage DDR2 memory for devices needing a small FBGA footprint and standard 1.8 V I/O compatibility.

Unique Advantages

• AEC‑Q100 Qualified: Provides automotive-grade qualification for use in vehicle electronic systems that require recognized component reliability.
• DDR2 Performance at 400 MHz: Enables high-throughput parallel memory operations with programmable latency and selectable burst lengths for flexible memory timing.
• Compact FBGA Package: 84-ball FBGA (8 mm × 12.5 mm) offers a small PCB footprint for space-constrained designs while supporting high-density routing.
• Flexible Voltage Range: 1.7 V–1.9 V supply supports standard DDR2 1.8 V I/O signaling for compatibility with common DDR2 system designs.
• Signal Integrity Features: On-die termination and DLL alignment of DQ/DQS improve timing margins and data eye performance in high-speed designs.
• Industry-Standard DDR2 Options: Programmable CAS, additive latency and selectable burst lengths enable tailoring of memory timing to application requirements.

Why Choose MT47H32M16NF-25E:H TR?

The MT47H32M16NF-25E:H TR combines DDR2 SDRAM architecture, an 84-ball FBGA package, and automotive AEC‑Q100 qualification to provide a compact, qualified memory building block for embedded and vehicle electronics. Its 512 Mbit capacity (32M × 16), 400 MHz clock capability, and configurable timing options make it suitable for designs that require standardized DDR2 performance with automotive-grade reliability.

This device is suited for engineers specifying reliable, low-voltage DDR2 memory in space-constrained PCBs and in applications where component qualification and consistent timing behavior are important for system integration and lifecycle support.

Request a quote or contact sales to discuss availability, pricing, and volume options for the MT47H32M16NF-25E:H TR.