MT47H64M8B6-25:D TR

The MT47H64M8B6-25:D TR is a 512 Mbit DDR2 SDRAM device manufactured by Micron Technology Inc., organized as 64M x 8 with a parallel memory interface. It implements DDR2 architecture and is offered in a 60‑ball FBGA package for compact board-level integration.

This device targets designs that require low-voltage (+1.8V ±0.1V) DDR2 memory at a 400 MHz clock frequency, providing programmable timing options and selectable burst lengths to match system timing and throughput requirements.

Key Features

• Core / Architecture DDR2 SDRAM architecture with 4‑bit prefetch and an internal DLL to align DQ and DQS transitions with CK.
• Memory Organization 512 Mbit capacity organized as 64M × 8 with 4 internal banks (16 Meg × 8 × 4 banks as listed in datasheet).
• Performance & Timing Rated for a 400 MHz clock frequency and 400 ps access time; programmable CAS latency and selectable burst lengths (4 or 8). Write cycle time (word page) is specified at 15 ns.
• Power & I/O VDD / VDDQ operating range +1.7 V to +1.9 V (JEDEC-standard 1.8 V I/O, SSTL_18-compatible as documented in the datasheet).
• Signal & Drive Options Differential data strobe (DQS/DQS#) option, duplicate output strobe (RDQS) option for x8 configuration, and adjustable data-output drive strength.
• System Reliability On‑die termination (ODT) and standard 8,192‑cycle (8K) refresh support with a 64 ms refresh interval.
• Package & Temperature Supplied in a 60‑ball FBGA package; the supplied commercial operating temperature range is 0°C to 85°C (T_C).
• Compliance RoHS compliant as stated in the datasheet.

Typical Applications

• Embedded memory expansion — Provides a 512 Mbit DDR2 parallel memory option for designs that require on‑board SDRAM in a 60‑ball FBGA footprint.
• Compact system modules — Small FBGA package supports space‑constrained board designs that need low‑voltage DDR2 memory at 400 MHz clocking.
• Legacy DDR2 parallel designs — Suitable for systems that implement DDR2 SDRAM parallel interfaces with programmable CAS and selectable burst length requirements.

Unique Advantages

• Standard DDR2 interface at 1.8 V — Operates within a +1.7 V to +1.9 V supply window, matching JEDEC 1.8 V I/O expectations.
• Programmable timing flexibility — Programmable CAS latency and selectable burst lengths allow tuning for different system timing and throughput needs.
• Compact FBGA packaging — 60‑ball FBGA package enables dense board placement while providing the full 512 Mbit DDR2 function.
• On‑die termination and drive options — ODT plus adjustable drive strength and strobe options reduce external termination complexity and support signal integrity tuning.
• Micron product backing — Part of Micron’s 512 Mb DDR2 device family with documented speed grades and package options in the datasheet.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8B6-25:D TR delivers a 512 Mbit DDR2 SDRAM option with programmable timing, 4‑bank architecture, and a 60‑ball FBGA package suitable for compact, low‑voltage designs. Its 400 MHz clock rating, on‑die termination, and drive/strobe options offer the configuration flexibility needed to match system timing and signal integrity requirements.

This device is appropriate for engineers specifying parallel DDR2 memory where a 64M × 8 organization, commercial temperature operation (0°C–85°C), and +1.8 V operation are required. It provides a verifiable set of features and timing options documented by the manufacturer for integration into existing DDR2 system architectures.

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