MT47H64M8B6-3 IT:D TR

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 1,790 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGAMemory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time450 psGradeAutomotive
Clock Frequency333 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 95°C (TC)Write Cycle Time Word Page15 nsPackaging60-FBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT47H64M8B6-3 IT:D TR – IC DRAM 512MBIT PARALLEL 60FBGA

The MT47H64M8B6-3 IT:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface. Designed as a volatile DDR2 memory component, it targets embedded and industrial systems requiring standard DDR2 architecture and industrial temperature operation.

This device provides DDR2 architecture features such as a DLL, internal banks and selectable burst lengths to support common SDRAM use cases where deterministic, high-throughput volatile storage is required. Key value propositions include support for industrial temperature ranges, a compact 60-ball FBGA package, and JEDEC-compatible DDR2 signaling and timing options documented in the product datasheet.

Key Features

  • Core / Architecture DDR2 SDRAM architecture with 4 internal banks and a 4n-bit prefetch design for standard DDR2 operation.
  • Memory Organization & Capacity 512 Mbit total capacity organized as 64M × 8 bits, providing byte-wide data paths for parallel memory systems.
  • Speed & Timing Clock frequency specified at 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns; supports programmable CAS latency and selectable burst lengths (4 or 8).
  • Power & I/O VDD / VDDQ supply range 1.7 V to 1.9 V (JEDEC-standard 1.8 V I/O). On-die termination (ODT) and adjustable data-output drive strength are supported per the datasheet.
  • System Features DLL for DQ/DQS alignment, optional differential data strobe (DQS/DQS#), duplicate output strobe (RDQS) option for x8, and standard refresh support (64 ms, 8,192-cycle refresh).
  • Package 60-ball FBGA package (60-FBGA) in a compact ball-grid format suitable for surface-mount assembly.
  • Temperature Range Industrial temperature option: −40°C to 95°C case temperature (IT option).
  • Compliance RoHS compliant per the product datasheet.

Typical Applications

  • Industrial Control Systems Provides volatile DDR2 storage for embedded controllers and data buffering where industrial temperature operation is required.
  • Communications Equipment Useful for packet buffering and temporary data storage in parallel-memory architectures.
  • Consumer/Embedded Devices Byte-wide DDR2 memory for general-purpose embedded DRAM needs in compact FBGA packages.

Unique Advantages

  • Industrial Temperature Support: Rated for −40°C to 95°C case temperature (IT), enabling deployment in temperature-sensitive industrial environments.
  • Compact FBGA Footprint: 60-ball FBGA package minimizes PCB area while supporting surface-mount assembly for space-constrained designs.
  • Standard DDR2 Feature Set: Includes DLL, ODT, selectable burst lengths and programmable CAS latency to align with JEDEC DDR2 design practices.
  • Low-Voltage Operation: Operates at 1.7 V–1.9 V supply range compatible with JEDEC 1.8 V I/O systems.
  • Family Options & Flexibility: Part of a 512 Mb DDR2 family offering x4, x8 and x16 configurations and multiple FBGA package variants per the datasheet.

Why Choose MT47H64M8B6-3 IT:D TR?

The MT47H64M8B6-3 IT:D TR places DDR2 SDRAM functionality in a compact 60-FBGA package with industrial temperature grading and standard DDR2 system features. Its 64M × 8 organization, programmable timing options and on-die termination support make it suitable for embedded designs that require JEDEC-compatible DDR2 memory behavior and robust thermal range.

This device is well suited for design teams needing a proven DDR2 memory building block offering industrial operation, compact packaging, and a standard DDR2 feature set documented in the product datasheet.

For pricing, availability or to request a quote for MT47H64M8B6-3 IT:D TR, please submit a request or contact sales to obtain a formal quote and lead-time information.

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