MT47H64M8B6-3 IT:D TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,790 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Automotive | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-FBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT47H64M8B6-3 IT:D TR – IC DRAM 512MBIT PARALLEL 60FBGA
The MT47H64M8B6-3 IT:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface. Designed as a volatile DDR2 memory component, it targets embedded and industrial systems requiring standard DDR2 architecture and industrial temperature operation.
This device provides DDR2 architecture features such as a DLL, internal banks and selectable burst lengths to support common SDRAM use cases where deterministic, high-throughput volatile storage is required. Key value propositions include support for industrial temperature ranges, a compact 60-ball FBGA package, and JEDEC-compatible DDR2 signaling and timing options documented in the product datasheet.
Key Features
- Core / Architecture DDR2 SDRAM architecture with 4 internal banks and a 4n-bit prefetch design for standard DDR2 operation.
- Memory Organization & Capacity 512 Mbit total capacity organized as 64M × 8 bits, providing byte-wide data paths for parallel memory systems.
- Speed & Timing Clock frequency specified at 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns; supports programmable CAS latency and selectable burst lengths (4 or 8).
- Power & I/O VDD / VDDQ supply range 1.7 V to 1.9 V (JEDEC-standard 1.8 V I/O). On-die termination (ODT) and adjustable data-output drive strength are supported per the datasheet.
- System Features DLL for DQ/DQS alignment, optional differential data strobe (DQS/DQS#), duplicate output strobe (RDQS) option for x8, and standard refresh support (64 ms, 8,192-cycle refresh).
- Package 60-ball FBGA package (60-FBGA) in a compact ball-grid format suitable for surface-mount assembly.
- Temperature Range Industrial temperature option: −40°C to 95°C case temperature (IT option).
- Compliance RoHS compliant per the product datasheet.
Typical Applications
- Industrial Control Systems Provides volatile DDR2 storage for embedded controllers and data buffering where industrial temperature operation is required.
- Communications Equipment Useful for packet buffering and temporary data storage in parallel-memory architectures.
- Consumer/Embedded Devices Byte-wide DDR2 memory for general-purpose embedded DRAM needs in compact FBGA packages.
Unique Advantages
- Industrial Temperature Support: Rated for −40°C to 95°C case temperature (IT), enabling deployment in temperature-sensitive industrial environments.
- Compact FBGA Footprint: 60-ball FBGA package minimizes PCB area while supporting surface-mount assembly for space-constrained designs.
- Standard DDR2 Feature Set: Includes DLL, ODT, selectable burst lengths and programmable CAS latency to align with JEDEC DDR2 design practices.
- Low-Voltage Operation: Operates at 1.7 V–1.9 V supply range compatible with JEDEC 1.8 V I/O systems.
- Family Options & Flexibility: Part of a 512 Mb DDR2 family offering x4, x8 and x16 configurations and multiple FBGA package variants per the datasheet.
Why Choose MT47H64M8B6-3 IT:D TR?
The MT47H64M8B6-3 IT:D TR places DDR2 SDRAM functionality in a compact 60-FBGA package with industrial temperature grading and standard DDR2 system features. Its 64M × 8 organization, programmable timing options and on-die termination support make it suitable for embedded designs that require JEDEC-compatible DDR2 memory behavior and robust thermal range.
This device is well suited for design teams needing a proven DDR2 memory building block offering industrial operation, compact packaging, and a standard DDR2 feature set documented in the product datasheet.
For pricing, availability or to request a quote for MT47H64M8B6-3 IT:D TR, please submit a request or contact sales to obtain a formal quote and lead-time information.