MT47H64M8B6-5E IT:D TR

The MT47H64M8B6-5E IT:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with features such as a 4n-bit prefetch and four internal banks to support concurrent memory operations.

Designed for applications requiring 1.8 V-class low-voltage operation and extended temperature operation, this industrial-temperature option provides deterministic timing and memory capacity for embedded and industrial designs.

Key Features

• Core & architecture  DDR2 SDRAM with 4n-bit prefetch architecture and four internal banks for concurrent operation, supporting programmable CAS latency and posted additive CAS latency.
• Memory capacity & organization  512 Mbit total capacity organized as 64M × 8 (16 Meg × 8 × 4 banks), delivering a compact memory footprint for mid-density designs.
• Performance & timing  Clock frequency listed at 200 MHz with an access time of 600 ps and a write cycle time (word page) of 15 ns; selectable burst lengths of 4 or 8 provide flexibility for sequential data transfers.
• Power & I/O  Low-voltage operation with VDD = 1.7 V–1.9 V (VDD/VDDQ = +1.8 V ±0.1 V) and JEDEC-standard 1.8 V I/O (SSTL_18-compatible); on-die termination (ODT) and adjustable data-output drive strength improve signal integrity.
• Data integrity & timing control  DLL aligns DQ and DQS transitions with the clock; differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8 configurations enhance timing margins.
• Package & temperature  60-ball FBGA package in a footprint suited to compact PCBs; industrial temperature option rated for −40°C to 95°C (T_C).
• Refresh & reliability  Standard JEDEC refresh scheme including 8,192-cycle refresh and 64 ms retention refresh interval to maintain data integrity.
• Regulatory status  Device is listed as RoHS compliant in the provided product documentation.

Typical Applications

• Industrial control systems  The industrial temperature rating (−40°C to 95°C) and compact FBGA package suit embedded controllers and factory automation modules that require reliable mid-density DRAM.
• Embedded computing modules  512 Mbit DDR2 density and parallel interface provide straightforward memory expansion for single-board computers and system-on-module designs.
• Networking and communications equipment  Programmable latencies, on-die termination, and selectable burst lengths support buffering and packet processing in network hardware.
• Consumer and portable electronics  Low-voltage 1.8 V operation and compact package enable integration into space-constrained devices where DDR2 memory is specified.

Unique Advantages

• Industrial temperature capability  Rated for −40°C to 95°C (T_C) for designs that require extended temperature operation.
• Low-voltage operation  VDD/VDDQ at approximately 1.8 V (1.7 V–1.9 V) reduces power budget compared with higher-voltage memories while maintaining JEDEC 1.8 V I/O compatibility.
• Flexible timing configuration  Programmable CAS latency, posted additive latency, and selectable burst lengths allow tuning for system throughput and latency requirements.
• Signal integrity features  On-die termination, DLL alignment of DQ/DQS, and differential DQS options improve timing margins on high-speed interfaces.
• Compact, board-friendly package  60-ball FBGA delivers a small footprint for space-constrained PCB layouts while providing reliable solder-ball termination.
• Designed for concurrent access  Four internal banks support interleaved access patterns to improve effective memory throughput in multi-stream workloads.

Why Choose MT47H64M8B6-5E IT:D TR?

The MT47H64M8B6-5E IT:D TR provides a balanced 512 Mbit DDR2 solution with industrial temperature support, low-voltage 1.8 V operation, and packaging suitable for compact embedded designs. Its combination of programmable timing, on-die termination, and banked architecture offers designers predictable latency and flexible throughput tuning.

This device is well suited to engineers specifying mid-density DRAM for embedded computing, industrial controllers, and communications equipment that require deterministic timing, a small board footprint, and extended temperature operation. The specified electrical and timing parameters enable integration into systems where DDR2 behavior and JEDEC 1.8 V I/O compatibility are required.

Request a quote or submit a quotation request to the sales team to discuss availability, pricing, and lead times for the MT47H64M8B6-5E IT:D TR.