MT47H64M8B6-5E:D TR

The MT47H64M8B6-5E:D TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It operates from a 1.7 V–1.9 V supply range and is specified with a commercial operating temperature of 0°C to 85°C (TC) and a clock frequency of 200 MHz.

Built on DDR2 SDRAM architecture, the device offers a 4n-bit prefetch design, internal DLL alignment, selectable burst lengths and programmable CAS latency, providing flexible timing and integration for board-level memory applications requiring compact FBGA packaging and 512 Mbit density.

Key Features

• Core / Architecture 4n-bit prefetch architecture with 4 internal banks for concurrent operation; DLL aligns DQ and DQS transitions with CK and supports programmable CAS latency and posted CAS additive latency.
• Memory Organization 512 Mbit capacity arranged as 64M × 8 (16 Meg × 8 × 4 banks) with parallel DDR2 interface and selectable burst lengths of 4 or 8.
• Timing and Performance Clock frequency listed at 200 MHz and access time of 600 ps; timing grades and cycle times are provided in the datasheet (examples include cycle times from 2.5 ns to 5.0 ns across speed grades).
• Power and I/O Low-voltage operation with VDD and VDDQ at +1.8 V ±0.1 V (product data lists 1.7 V–1.9 V supply); JEDEC-standard 1.8 V I/O (SSTL_18-compatible), adjustable data-output drive strength and on-die termination (ODT) options.
• Interface Options Differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8 devices provide flexible data capture and timing choices.
• Package and Environment 60-ball FBGA package (60-FBGA) for compact board integration; commercial operating temperature 0°C to 85°C (TC). Datasheet also documents an industrial temperature option.
• Standards and Compliance RoHS compliant and supports JEDEC clock jitter specifications as documented in the product datasheet.

Typical Applications

• Board-level DDR2 memory module — Serves as a 512 Mbit DDR2 DRAM component for PCB designs requiring a parallel interface and compact 60-FBGA footprint.
• Embedded system memory — Provides off-chip volatile storage in embedded designs that specify 64M × 8 DDR2 density and programmable timing.
• Memory upgrades and replacements — Suitable where a direct-fit 60-FBGA DDR2 512 Mbit part is required for existing DDR2 memory architectures.

Unique Advantages

• Low-voltage operation: Operates from 1.7 V–1.9 V (VDD/VDDQ +1.8 V ±0.1 V), enabling designs targeting standard 1.8 V DDR2 power rails.
• Flexible timing options: Programmable CAS latencies, posted additive latency and multiple speed grades allow designers to match system timing and throughput requirements.
• Compact FBGA packaging: 60-ball FBGA package simplifies routing and saves PCB area compared with larger packages.
• On-die termination and I/O control: ODT and adjustable drive strength help manage signal integrity on high-speed DDR2 interfaces.
• Design-grade documentation: Datasheet includes timing tables, addressing maps and speed-grade options to support validation and integration.
• RoHS compliant: Environmentally conscious manufacturing status noted in the datasheet.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8B6-5E:D TR is positioned for designs that require a compact, low-voltage 512 Mbit DDR2 memory device with programmable timing and industry-standard DDR2 features. Its 64M × 8 organization, 60-FBGA footprint and documented timing options make it a straightforward choice for system-level memory implementations where a parallel DDR2 DRAM is specified.

With on-die termination, adjustable drive strength and selectable timing grades documented in the datasheet, this device supports board-level integration and timing flexibility, while RoHS compliance and available temperature options provide supply-chain and deployment transparency for commercial designs.

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