MT47H64M8CB-25:B

The MT47H64M8CB-25:B is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60‑ball FBGA package. It targets designs that require JEDEC‑standard DDR2 memory architecture with a 1.8 V I/O and support for programmable timing and refresh.

Key value propositions include DDR2 performance features (DLL, programmable CAS latency, selectable burst lengths), compact 60‑FBGA packaging, and a commercial operating range of 0°C to 85°C for integration into standard embedded and system memory designs.

Key Features

• Memory Architecture: DDR2 SDRAM, 64M × 8 organization (512 Mbit total) with 4 internal banks and 4n‑bit prefetch architecture for standard DDR2 operation.
• Interface and I/O: Parallel memory interface with JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible); differential data strobe (DQS/DQS#) option and duplicate RDQS option for x8 configurations.
• Timing and Performance: Programmable CAS latency, posted CAS additive latency, selectable burst lengths of 4 or 8, and a DLL to align DQ/DQS with CK. Specified clock frequency 400 MHz and access time 400 ps.
• Power and Voltage: Vdd = +1.8 V ±0.1 V (data I/O VddQ = +1.8 V ±0.1 V); supply range 1.7 V to 1.9 V.
• Signal Integrity: On‑die termination (ODT) and adjustable data‑output drive strength to help manage signal integrity in memory subsystems.
• Refresh and Reliability: 64 ms, 8,192‑cycle refresh support for standard DDR2 refresh requirements.
• Package and Temperature: 60‑FBGA package (60‑ball FBGA) with a commercial operating temperature range of 0°C to 85°C (TC).
• Compliance: Supports JEDEC clock jitter specification; datasheet lists RoHS compliance.

Typical Applications

• System memory modules: Use as conventional DDR2 system memory in designs requiring 512 Mbit density and parallel DDR2 interfaces.
• Embedded systems: Integration into embedded boards and modules that need a compact 60‑FBGA DDR2 memory device with programmable timing.
• Commercial‑temperature electronics: Memory for devices and subsystems specified to operate within 0°C to 85°C.

Unique Advantages

• JEDEC‑standard DDR2 I/O: 1.8 V ±0.1 V I/O compatibility simplifies integration with DDR2‑compatible memory controllers and platforms.
• Flexible timing options: Programmable CAS latency, posted additive latency and selectable burst lengths provide designers flexibility to tune performance for target data rates.
• Signal integrity features: On‑die termination and adjustable drive strength help reduce reflections and enable cleaner data transfers on parallel buses.
• Compact FBGA packaging: 60‑ball FBGA offers a small form factor for space‑constrained modules while retaining required ballout for parallel DDR2 connections.
• Standard refresh management: 64 ms / 8,192‑cycle refresh support aligns with DDR2 refresh requirements for reliable data retention.

Why Choose MT47H64M8CB-25:B?

The MT47H64M8CB-25:B provides a standards‑based DDR2 SDRAM solution in a compact 60‑FBGA package, combining configurable timing (programmable CAS, DLL, burst length) with on‑die termination and adjustable drive strength for controlled signaling. Its 1.8 V operating point and 64M × 8 organization make it suitable for designs that require parallel DDR2 memory at 512 Mbit density.

This device is well suited to designers and procurement teams building DDR2‑based memory subsystems or embedded boards that need predictable timing behavior, standard refresh handling, and a commercial temperature rating. The combination of JEDEC‑aligned electricals and package options supports straightforward integration into existing DDR2 platforms.

Request a quote or submit an inquiry for pricing and availability for the MT47H64M8CB-25:B to receive detailed lead‑time and ordering information.