MT47H64M8CB-37E IT:B

The MT47H64M8CB-37E IT:B is a 512 Mbit DDR2 SDRAM device organized as 64M x 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with on-die termination, DLL alignment and selectable burst lengths for configurable memory timing and data transfer behavior.

This industrial-temperature option (operating temperature −40°C to 95°C (TC)) and low-voltage operation (1.7 V–1.9 V) make the device suitable for board-level DRAM applications that require compact packaging, JEDEC timing support and flexible timing configuration.

Key Features

• Memory Core & Organization 512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks for concurrent operation.
• Performance 267 MHz clock frequency and 500 ps access time; write cycle time (word page) of 15 ns for predictable transfer timing.
• DDR2 Architecture & Timing 4n-bit prefetch architecture, programmable CAS latency (CL) and selectable burst lengths (4 or 8) to tune performance to system requirements.
• Signal Integrity & I/O On-die termination (ODT), DLL to align DQ and DQS transitions with CK, differential data strobe (DQS/DQS#) option and duplicate RDQS option for x8 improve timing and signal integrity; JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Power Low-voltage supply: Vdd and VddQ = +1.8 V ±0.1 V (operating range 1.7 V–1.9 V) to support lower-power system designs.
• Package & Temperature 60-ball FBGA package and industrial temperature rating (−40°C to 95°C TC) for compact board-level integration in extended-temperature environments.
• Standards & Compliance Designed to JEDEC timing and clock jitter specifications; datasheet notes RoHS compliance.

Typical Applications

• Embedded systems — Board-level DRAM for embedded processors and controllers requiring DDR2 parallel memory in a compact FBGA package.
• Industrial control — Memory buffering and working storage in systems that operate across an extended temperature range (−40°C to 95°C TC).
• Networking and communications — Packet buffering and temporary data storage where DDR2 timing flexibility and ODT/DLL features support reliable high-speed transfers.
• System memory expansion — Parallel DDR2 memory option for legacy or DDR2-based platforms requiring 512 Mbit density and x8 data organization.

Unique Advantages

• Low-voltage DDR2 operation: 1.7 V–1.9 V supply range (Vdd/VddQ = 1.8 V ±0.1 V) reduces system power demands compared with higher-voltage alternatives.
• Extended operating temperature: Industrial temperature rating (−40°C to 95°C TC) enables use in harsher ambient environments.
• Compact FBGA package: 60-ball FBGA provides a small footprint for high-density board designs.
• Flexible timing control: Programmable CAS latency, selectable burst lengths and 4n-bit prefetch architecture allow tuning of latency and throughput to match system requirements.
• Enhanced signal integrity: On-die termination, DLL, and differential DQS options help maintain reliable high-speed data transfers.
• Manufacturer pedigree: Manufactured by Micron Technology Inc., with datasheet-level support for JEDEC timing and I/O specifications.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT47H64M8CB-37E IT:B delivers a 512 Mbit DDR2 solution that balances compact packaging, configurable timing and extended-temperature operation. Its DDR2 feature set—ODT, DLL, programmable CL and selectable burst lengths—offers designers precise control over timing and signal integrity at a standard 1.8 V I/O voltage.

This device is suited to designs that require a reliable parallel DDR2 memory element in a 60-ball FBGA footprint, particularly where industrial temperature operation and low-voltage power are required. The device’s JEDEC-aligned features and datasheet-specified characteristics support integration into systems requiring documented timing and electrical behavior.

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