MT47H64M8CB-37E:B TR

The MT47H64M8CB-37E:B TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements a DDR2 architecture with 4 internal banks and a 4n-bit prefetch to support burst transactions and concurrent memory operations.

Designed for systems requiring volatile high-speed DRAM, the device operates from a 1.7 V to 1.9 V supply and supports an operating temperature range of 0°C to 85°C, offering a combination of compact packaging and DDR2 performance characteristics for embedded and board-level memory expansion.

Key Features

• Core & architecture DDR2 SDRAM architecture with 4n-bit prefetch and 4 internal banks for concurrent operation and efficient burst transfers.
• Memory organization 512 Mbit capacity organized as 64M × 8 (16 Meg × 8 × 4 banks).
• Performance & timing Specified clock frequency 267 MHz, access time 500 ps, and write cycle time (word page) of 15 ns; supports selectable burst lengths of 4 or 8 and programmable CAS latency.
• Power & I/O VDD / VDDQ supply range of 1.7 V to 1.9 V and JEDEC‑standard 1.8 V I/O compatibility as documented in the device datasheet.
• Signal integrity & timing features DLL to align DQ and DQS transitions with CK, differential data strobe (DQS/DQS#) option, and on-die termination (ODT) options to aid signal integrity.
• Package & temperature 60-ball FBGA package (60-FBGA) in a compact footprint; commercial operating temperature range 0°C to 85°C as specified.

Typical Applications

• Embedded memory expansion — Provides 512 Mbit of volatile DDR2 storage for embedded platforms that require parallel SDRAM in a compact FBGA package.
• Board-level DRAM subsystems — Suitable for system memory arrays where 64M × 8 organization and burst-transfer support are required.
• High-speed buffering — Useful for designs requiring DDR2 timing features such as programmable CAS latency, differential DQS, and on-die termination to manage high-speed data transfers.

Unique Advantages

• Low-voltage operation: Operates from 1.7 V to 1.9 V, aligning with JEDEC 1.8 V I/O standards for lower power supply requirements.
• Compact FBGA packaging: 60-ball FBGA reduces board footprint while providing a parallel DDR2 interface for dense board-level designs.
• Flexible timing options: Programmable CAS latency, selectable burst lengths, and DLL support allow tuning for differing system timing requirements.
• Signal integrity features: Differential DQS options and on-die termination help stabilize high-speed DDR2 transfers on modern PCB layouts.
• Concurrent bank operation: Four internal banks and 4n-bit prefetch architecture support concurrent operations and efficient burst throughput.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT47H64M8CB-37E:B TR positions itself as a compact, DDR2-based volatile memory solution that balances density, timing flexibility, and signal-integrity features in a 60-FBGA package. Its 512 Mbit capacity, 64M × 8 organization, and support for programmable CAS latency and burst transfers make it suitable for designs that require parallel DDR2 memory with controllable timing and low-voltage operation.

This part is suited to engineers and procurement teams specifying board-level DRAM where package size, JEDEC-compatible 1.8 V I/O, and a defined commercial temperature range (0°C to 85°C) are primary selection criteria. The combination of on-die termination, DLL alignment, and differential DQS options supports robust integration into high-speed memory subsystems.

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