MT47H64M8CB-37V:B

The MT47H64M8CB-37V:B is a 512 Mbit DDR2 SDRAM organized as 64M x 8 with a parallel memory interface, packaged in a 60-ball FBGA. It implements DDR2 architecture and family-level features such as programmable CAS latency, on-die termination and a 4n-bit prefetch architecture.

This device is intended for commercial-temperature designs requiring compact, low-voltage DDR2 memory in a 60-FBGA footprint. Key value propositions include a compact package, standard 1.8 V I/O signaling and timing options suitable for designs targeting a 267 MHz clock frequency (DDR2-533 data rate).

Key Features

• Memory Type and Organization DDR2 SDRAM, 512 Mbit organized as 64M × 8 with 4 internal banks for concurrent operation.
• Performance Supports DDR2 timing options and programmable CAS latency; specified clock frequency of 267 MHz and access time of 500 ps.
• DDR2 Architecture 4n-bit prefetch architecture, selectable burst lengths (4 or 8), and DLL to align DQ and DQS with CK for reliable high-speed transfers.
• Interface and Signaling JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8 devices.
• Power Low-voltage supply range: 1.7 V to 1.9 V (VDD/VDDQ typical +1.8 V operating point).
• Reliability and Refresh On-die termination (ODT), adjustable data-output drive strength, and 64 ms / 8,192-cycle refresh support.
• Timing and Cycle Write cycle time (word page) specified at 15 ns; family timing grades support a range of data rates and CAS settings.
• Package 60-ball FBGA package (60-FBGA) in a compact footprint for board-level space savings.
• Operating Range and Compliance Commercial operating temperature 0 °C to 85 °C (TC) and RoHS compliance noted in the product documentation.

Typical Applications

• Embedded systems — Provides compact DDR2 memory for embedded designs that require 512 Mbit parallel SDRAM in a 60-FBGA package.
• Consumer electronics — Suitable for commercial-temperature consumer devices that implement DDR2 memory with standard 1.8 V I/O.
• Networking and communications modules — Use as board-level DRAM where parallel DDR2 memory and selectable timing/burst options are required.

Unique Advantages

• Compact FBGA footprint: 60-ball FBGA package reduces board area while providing a full DDR2 memory interface.
• Low-voltage operation: 1.7 V–1.9 V supply range and JEDEC 1.8 V I/O reduce power compared with higher-voltage memories.
• Flexible timing options: Programmable CAS latency, selectable burst lengths and multiple timing grades enable tuning for target data rates.
• Signal integrity features: DLL, differential DQS option and on-die termination help align and stabilize high-speed data transfers.
• Industry-standard architecture: 4n-bit prefetch and 4-bank organization align with standard DDR2 system designs for predictable integration.

Why Choose MT47H64M8CB-37V:B?

The MT47H64M8CB-37V:B positions itself as a compact, low-voltage DDR2 SDRAM solution for commercial-temperature applications requiring 512 Mbit of parallel memory in a 60-ball FBGA package. Its combination of JEDEC-standard 1.8 V I/O, programmable timing, ODT and DDR2 architectural features supports integration into designs that need predictable DDR2 behavior at a 267 MHz clock specification.

This device is well suited to engineers and procurement teams building board-level systems that prioritize a small package, standard DDR2 signaling and configurable timing options. The product documentation includes family-level features such as selectable burst lengths, refresh characteristics and drive-strength adjustments to support system tuning and long-term maintainability.

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