MT47H64M8CB-5E IT:B

The MT47H64M8CB-5E IT:B is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel interface in a 60-ball FBGA package. It implements DDR2 architecture with 4 internal banks, programmable CAS latency and on-die termination to deliver standard DDR2 system memory behavior.

Targeted for embedded and industrial systems requiring a 1.8 V DDR2 memory solution, this device provides a combination of performance (200 MHz clock), density (512 Mbit) and an extended operating temperature range suitable for industrial-temperature applications.

Key Features

• Memory Core DDR2 SDRAM architecture, 512 Mbit capacity organized as 64M × 8 with 4 internal banks for concurrent operation.
• Performance & Timing 200 MHz clock frequency with an access time of 600 ps and a write cycle time (word page) of 15 ns; programmable CAS latency and selectable burst lengths of 4 or 8.
• Power Low-voltage operation: VDD and VDDQ = 1.8 V ±0.1 V (specified supply range 1.7 V to 1.9 V) to support JEDEC-standard 1.8 V I/O signaling.
• Signal & Interface Options JEDEC-standard SSTL_18-compatible I/O, optional differential data strobe (DQS/DQS#), duplicate output strobe (RDQS) option for x8, and DLL for DQ/DQS alignment with CK.
• System Features On-die termination (ODT), 4n-bit prefetch architecture, posted CAS additive latency and a 64 ms, 8,192-cycle refresh scheme.
• Package & Temperature 60-ball FBGA package in an industrial-temperature option; operating temperature range specified as –40°C to 95°C (TC).
• Standards & Compliance Supports JEDEC clock jitter specification and is listed as RoHS compliant in the product documentation.

Typical Applications

• Industrial control and automation: Provides system memory for controllers and PLCs requiring industrial-temperature operation and a parallel DDR2 interface.
• Embedded computing: Serves as main or buffer memory for embedded processors and SoC platforms that use DDR2 x8 memory devices.
• Networking and communications equipment: Acts as packet buffering or working memory where a 1.8 V DDR2 solution with programmable latency is required.

Unique Advantages

• Compact FBGA footprint: 60-ball FBGA package reduces board area while providing a standard ballout for assembly and routing.
• Low-voltage DDR2 operation: 1.8 V VDD/VDDQ minimizes supply overhead for systems designed around JEDEC 1.8 V signaling.
• Industrial temperature support: Specified operation from –40°C to 95°C (TC) for deployments in extended-temperature environments.
• Flexible timing and control: Programmable CAS latency, selectable burst lengths and on-die features (ODT, DLL) enable tuning for system performance and signal integrity.
• Standardized interface: JEDEC-compatible DDR2 signaling and refresh architecture simplify integration with DDR2 memory controllers.

Why Choose MT47H64M8CB-5E IT:B?

The MT47H64M8CB-5E IT:B is positioned as a 512 Mbit DDR2 SDRAM solution that balances density, standard DDR2 interface features and industrial-temperature operation. Its 64M × 8 organization, 4 internal banks and programmable timing options make it suitable for systems that require predictable DDR2 performance at a 1.8 V supply.

Manufactured by Micron Technology Inc., this device is appropriate for designs needing compact FBGA packaging, JEDEC-standard DDR2 I/O and the ability to operate across an extended temperature range. It is a practical choice for embedded and industrial designs that require a proven DDR2 memory building block tied to Micron’s DDR2 product family documentation.

If you need pricing, availability or a formal quote for the MT47H64M8CB-5E IT:B, request a quote or submit an inquiry to receive specific lead-time and purchasing information.