MT47H64M8CB-5E:B TR

The MT47H64M8CB-5E:B TR is a 512 Mbit DDR2 SDRAM organized as 64M x 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture and JEDEC-compatible 1.8 V signaling for standard DDR2 system designs.

Designed for commercial-temperature applications, this device targets compact, low-voltage memory subsystems requiring programmable timing, selectable burst lengths, and on-die termination options to support system-level signal integrity and performance at a 200 MHz clock rate.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 64M x 8 with 4 internal banks and a 4n-bit prefetch architecture.
• Performance & Timing Operates at a 200 MHz clock frequency (DDR2-400), with an access time of 600 ps and write cycle time (word page) of 15 ns. Supports programmable CAS latency and posted CAS additive latency.
• JEDEC 1.8 V I/O VDD operating range of 1.7 V to 1.9 V (Vdd = +1.8 V ±0.1 V), with SSTL_18-compatible signaling.
• Data Integrity & Interface Options Differential data strobe (DQS, DQS#) option and duplicate output strobe (RDQS) option for x8; DLL aligns DQ/DQS transitions with CK.
• Burst and Drive Control Selectable burst lengths of 4 or 8 and adjustable data-output drive strength to match system timing and loading.
• System Reliability On-die termination (ODT), 64 ms / 8,192-cycle refresh, and compliance with JEDEC clock jitter specification help maintain signal integrity and data retention.
• Package & Temperature 60-FBGA supplier device package for compact board integration; commercial operating temperature range of 0°C to 85°C.
• Memory Interface Parallel DDR2 interface suitable for standard DRAM memory controller implementations.

Typical Applications

• Commercial-temperature system memory Integration into systems that require 512 Mbit DDR2 memory operating across 0°C to 85°C with JEDEC-compatible 1.8 V I/O.
• Space-constrained PCBs Compact 60-ball FBGA package enables high-density memory placement where board area and profile are limited.
• Parallel DDR2 subsystems Use in designs that implement parallel DDR2 memory interfaces with programmable CAS latency and selectable burst lengths for timing flexibility.

Unique Advantages

• Low-voltage operation: 1.7 V–1.9 V supply keeps power efficient while adhering to JEDEC 1.8 V I/O standards.
• Flexible timing configuration: Programmable CAS latency, posted CAS additive latency, and selectable burst lengths allow tailoring to system timing and throughput requirements.
• Signal integrity features: On-die termination (ODT), DLL alignment of DQ/DQS with CK, and adjustable drive strength support robust high-speed signaling.
• Compact footprint: 60-FBGA package provides a small, manufacturable form factor for dense system designs.
• Standard DDR2 architecture: 4n-bit prefetch, 4 internal banks, and JEDEC-compliant signaling enable straightforward integration with DDR2 memory controllers.

Why Choose MT47H64M8CB-5E:B TR?

The MT47H64M8CB-5E:B TR delivers a compact, JEDEC-compatible DDR2 SDRAM solution with 512 Mbit density, flexible timing options, and signal-integrity features suited to commercial-temperature designs. Its 60-FBGA package and low-voltage operation make it appropriate for space-constrained systems that require standard DDR2 performance at a 200 MHz clock rate.

This device is suited for engineers and procurement teams specifying DDR2 memory where verified JEDEC features (programmable CAS, burst control, ODT, DLL) and a commercial operating range are required for reliable system integration.

Request a quote or contact sales to discuss availability, volume pricing, and integration support for the MT47H64M8CB-5E:B TR.