MT47H64M8CF-25E IT:G TR

The MT47H64M8CF-25E IT:G TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and JEDEC-standard 1.8V I/O.

Targeted for designs that require board-level parallel DRAM capacity with industrial-temperature operation, the device combines 1.7–1.9V supply range, a 400 MHz clock frequency rating, and a compact 60-FBGA (8 × 10 mm) footprint for space-constrained systems.

Key Features

• Core / Memory Organization 512 Mbit capacity organized as 64M × 8 with 4 internal banks for concurrent operation.
• DDR2 Architecture DDR2 SDRAM with 4n-bit prefetch, programmable CAS latency and selectable burst lengths of 4 or 8.
• Timing & Performance Rated with a 400 MHz clock frequency and 400 ps access time; write cycle time (word page) of 15 ns.
• Voltage & I/O Operates from 1.7 V to 1.9 V with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and support for differential data strobe (DQS/DQS#) options.
• Signal Integrity & On-die Features Includes DLL for DQ/DQS alignment, on-die termination (ODT), and support for JEDEC clock jitter specifications.
• Package & Mounting 60-ball TFBGA (8 × 10 mm) package optimized for board-level mounting and compact system integration.
• Temperature Range Industrial-temperature option with operating temperature specified from −40°C to 95°C (TC).

Typical Applications

• Industrial Systems Industrial-temperature option and −40°C to 95°C operating range support deployment in temperature-challenging environments.
• Parallel Memory Subsystems 64M × 8 organization and parallel DDR2 interface suit use as board-level DRAM for systems requiring 512 Mbit memory capacity.
• Compact Board Designs 60-ball FBGA (8 × 10 mm) package facilitates dense PCB layouts where board space is limited.

Unique Advantages

• Compact FBGA Footprint: 60-ball FBGA (8 × 10 mm) package enables space-efficient board integration without sacrificing capacity.
• Industrial-Temperature Capability: Specified operation from −40°C to 95°C (TC) provides a temperature range suited to industrial applications.
• JEDEC 1.8V I/O Compatibility: 1.7–1.9V supply range with SSTL_18-compatible I/O simplifies integration with standard DDR2 system interfaces.
• Timing Flexibility: Programmable CAS latency, DLL alignment, and selectable burst lengths let designers tune performance and timing behavior.
• On-Die Signal Management: On-die termination and support for differential DQS/DQS# improve signal integrity in high-speed parallel interfaces.
• Concurrent Bank Operation: Four internal banks enable concurrent operations to assist throughput in multi-access scenarios.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8CF-25E IT:G TR positions itself as a compact, industrial-temperature DDR2 memory option delivering 512 Mbit capacity in a 60-ball FBGA package. Its 1.7–1.9V supply compatibility, JEDEC-standard I/O, DLL, and on-die termination features make it suitable for systems that require predictable DDR2 behavior and board-level memory integration.

This device is appropriate for designs that need a standardized DDR2 memory footprint with selectable timing modes and industrial operating range, offering predictable integration characteristics for long-term deployments where JEDEC compatibility and compact packaging are priorities.

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