MT47H64M8CF-25E:G TR

The MT47H64M8CF-25E:G TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball TFBGA package (8 mm × 10 mm). It implements DDR2 architecture with a 4n-bit prefetch and supports standard DDR2 timing and control features.

Designed for systems requiring JEDEC-standard 1.8 V I/O operation and commercial temperature operation (0°C to 85°C), this device offers programmable timing, on-die termination and options for differential data strobe to support reliable high-speed data transfers at DDR2 rates.

Key Features

• Core / Memory Architecture — 512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks for concurrent operation (16M × 8 × 4 banks).
• Performance & Timing — Supports DDR2 timing including programmable CAS latency and selectable burst lengths of 4 or 8; specified clock frequency 400 MHz and access time 400 ps. Write cycle time (word page) is 15 ns.
• Power & I/O — VDD / VDDQ supply range 1.7 V to 1.9 V (JEDEC-standard 1.8 V ±0.1 V) with adjustable data-output drive strength and SSTL_18-compatible I/O.
• Signal Integrity & Timing Control — DLL aligns DQ and DQS transitions with CK; on-die termination (ODT) and differential data strobe (DQS/DQS#) option improve signal timing and integrity. Duplicate output strobe (RDQS) option available for x8 configuration.
• Refresh & Reliability — Standard 64 ms, 8192-cycle refresh; supports JEDEC clock jitter specification for stable operation at specified DDR2 data rates. Datasheet documents industrial and automotive package options, while this part is specified for commercial temperature range.
• Package — 60-ball FBGA (8 mm × 10 mm, TFBGA) compact supplier device package for surface-mount applications.
• Compliance — Datasheet lists RoHS-compliant options for the family.

Typical Applications

• Legacy DDR2 system memory — Provides 512 Mbit DDR2 storage for platforms and designs built around parallel DDR2 SDRAM interfaces operating at commercial temperatures.
• Embedded memory subsystems — Compact 60-ball FBGA package suits space-constrained boards that require standard 1.8 V DDR2 memory with programmable timing.
• Consumer and industrial electronics — Commercial-temperature designs that need DDR2 performance with on-die termination and burst-mode transfers benefit from this device’s features.

Unique Advantages

• JEDEC-standard 1.8 V I/O: Ensures compatibility with SSTL_18 signaling and standard DDR2 host interfaces.
• Flexible timing and burst control: Programmable CAS latency and selectable burst lengths (4 or 8) allow designers to tune performance for specific system timing requirements.
• Signal integrity features: On-die termination, DLL alignment of DQ/DQS, and differential DQS options reduce design margin risk at DDR2 data rates.
• Compact BGA footprint: 60-ball TFBGA (8 mm × 10 mm) minimizes board area while providing a full DDR2 64M × 8 organization.
• Commercial temperature rating: Specified 0°C to 85°C operation for mainstream consumer and many industrial applications.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8CF-25E:G TR delivers a straightforward, standards-based DDR2 memory solution with 512 Mbit density, JEDEC 1.8 V I/O compatibility, and on-die features that simplify signal integrity and timing design. Its 64M × 8 organization, programmable timing, and selectable burst lengths make it suitable for designs that require deterministic DDR2 behavior in a compact FBGA package.

This part is targeted at designers and procurement teams implementing commercial-temperature DDR2 memory subsystems who need a documented, standards-aligned DRAM device with configurable timing and integrated signal-management features to support reliable operation at specified DDR2 data rates.

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