MT47H64M8JN-25E:G

The MT47H64M8JN-25E:G is a 512 Mbit DDR2 SDRAM organized as 64M x 8 in a 60-FBGA (8×10) package. It provides a parallel DDR2 memory interface with specifications geared toward designs that require mid-density volatile DRAM in a compact BGA footprint.

Key architectural points include DDR2 SDRAM technology, a 400 MHz clock frequency, and a nominal supply voltage range of 1.7 V to 1.9 V, supporting systems that need relatively high-speed parallel memory access within the specified operating temperature range.

Key Features

• Memory Core  DDR2 SDRAM technology with a total capacity of 512 Mbit organized as 64M × 8, suitable for parallel memory architectures.
• Performance  400 MHz clock frequency and 400 ps access time to support higher-speed data transfers within the DDR2 specification.
• Timing  Write cycle time (word page) specified at 15 ns for predictable page write behavior.
• Power  Operates from a 1.7 V to 1.9 V supply range, aligning with DDR2 low-voltage operation requirements.
• Package  60-TFBGA / 60-FBGA (8×10) package case providing a compact surface-mount footprint for board-level integration.
• Interface & Format  Parallel memory interface in DRAM format for direct integration with parallel DDR2 memory controllers.
• Temperature Range  Rated for operation from 0°C to 85°C (TC), suitable for designs operating in standard commercial temperature conditions.

Typical Applications

• Embedded memory expansion  Provides 512 Mbit of DDR2 parallel DRAM for embedded boards requiring on-board volatile storage.
• System buffering  Used as high-speed parallel memory for data buffering where a 400 MHz DDR2 interface is required.
• Compact board designs  The 60-FBGA package enables integration into space-constrained PCBs needing a mid-density DRAM solution.

Unique Advantages

• Mid-density DDR2 capacity: 512 Mbit organized as 64M × 8 offers a balance between capacity and board area for many embedded applications.
• High-frequency operation: 400 MHz clock frequency and 400 ps access time support faster parallel memory transactions for performance-oriented designs.
• Low-voltage operation: 1.7 V to 1.9 V supply range reduces power envelope compared with higher-voltage memories where applicable.
• Compact BGA footprint: 60-FBGA (8×10) package minimizes PCB area while providing a robust surface-mount package for automated assembly.
• Predictable timing: 15 ns write cycle time (word page) gives clear timing parameters for memory controller design and integration.
• Commercial temperature rating: 0°C to 85°C operating range matches standard commercial environments and typical system cooling scenarios.

Why Choose MT47H64M8JN-25E:G?

The MT47H64M8JN-25E:G positions itself as a compact, mid-density DDR2 DRAM option delivering 512 Mbit of parallel memory with a 400 MHz clock and defined timing characteristics. Its 60-FBGA package and low-voltage operation make it suitable for designs that need dependable DDR2 performance in a small board footprint within commercial temperature ranges.

This device is appropriate for engineers and procurement teams designing embedded systems, buffering subsystems, or compact boards that require verifiable DDR2 specifications and straightforward integration with parallel memory controllers.

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