MT47H64M8SH-25E AAT:H

The MT47H64M8SH-25E AAT:H is a 512 Mbit DDR2 SDRAM organized as 64M x 8 with a parallel memory interface in a 60‑ball TFBGA (8×10 mm) package. It implements DDR2 architecture with a 4n‑bit prefetch, on‑die termination and options for differential data strobe signals and duplicate RDQS for x8 configurations.

Targeted for automotive applications, the device carries AEC‑Q100 qualification, supports an ambient operating range of −40°C to +105°C (TA) and operates from a 1.7 V to 1.9 V supply. Its combination of programmable timing, compact FBGA package and automotive qualification provides a compact, qualified memory option for systems requiring parallel DDR2 DRAM.

Key Features

• Core & architecture DDR2 SDRAM with 64M × 8 organization, 4 internal banks and a 4n‑bit prefetch architecture for standard DDR2 operation.
• Performance & timing 400 MHz clock frequency (400 MT/s), access time 400 ps and write cycle time (word/page) of 15 ns. Programmable CAS latency (CL) and posted CAS additive latency (AL) are supported, with selectable burst lengths of 4 or 8.
• Power & I/O Operates from VDD = 1.7 V to 1.9 V (VDDQ = 1.8 V ±0.1 V) with JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible). Adjustable data‑output drive strength and on‑die termination (ODT) are included.
• Signal integrity & timing control Differential data strobe (DQS/DQS#) option, duplicate RDQS option for x8, and an integrated DLL to align DQ and DQS transitions with CK.
• Reliability & automotive qualification AEC‑Q100 qualified and supplied in an automotive grade variant (AT) with PPAP submission and 8D response capability. Supports 64 ms, 8192‑cycle refresh.
• Package & environmental 60‑TFBGA (60‑FBGA, 8×10 mm) package (Pb‑free), rated for ambient operation −40°C to +105°C (TA).

Typical Applications

• Automotive electronic control modules — Parallel DDR2 memory for ECUs and control units requiring AEC‑Q100 qualification and extended ambient temperature support (−40°C to +105°C TA).
• Automotive infotainment and telematics systems — Compact 60‑ball FBGA package provides 512 Mbit storage in space‑constrained automotive boards.
• Embedded memory subsystems — 64M × 8 organization with programmable CAS latency and selectable burst lengths for designers needing standard DDR2 parallel memory performance at 400 MT/s.

Unique Advantages

• Automotive qualification: AEC‑Q100 grading and automotive temperature variant ensure the device meets automotive reliability and temperature requirements.
• Extended operating range: Specified for −40°C to +105°C (TA), supporting wide temperature operation for harsh environments.
• Compact FBGA footprint: 60‑TFBGA (8×10 mm) package delivers 512 Mbit capacity in a small, board‑level form factor.
• Flexible timing and signal features: Programmable CAS latency, posted CAS additive latency, DLL alignment and selectable burst lengths enable tuning for system timing and throughput.
• Power‑efficient DDR2 I/O: 1.7 V–1.9 V supply range with JEDEC 1.8 V I/O compatibility and on‑die termination to simplify interface design and signal integrity management.
• Manufacturing support: PPAP submission and 8D response indicate readiness for automotive production processes and corrective action traceability.

Why Choose MT47H64M8SH-25E AAT:H?

The MT47H64M8SH-25E AAT:H positions itself as a robust, automotive‑grade DDR2 DRAM option delivering 512 Mbit of parallel memory in a compact 60‑ball FBGA package. With AEC‑Q100 qualification, extended ambient temperature rating and JEDEC‑compatible 1.8 V I/O, it is suited to designs that require qualified, board‑level DDR2 memory with adjustable timing and on‑die features for improved signal integrity.

This device is appropriate for engineers and procurement teams specifying qualified DDR2 memory for automotive and embedded systems where compact package, predictable timing control and automotive production support (PPAP, 8D) are required for long‑term deployment.

Request a quote or contact sales to discuss availability, lead times and integration support for MT47H64M8SH-25E AAT:H.