MT47H64M8SH-25E IT:H
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 736 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x10) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Automotive | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT47H64M8SH-25E IT:H – IC DRAM 512MBIT PARALLEL 60FBGA
The MT47H64M8SH-25E IT:H is a 512 Mbit volatile memory device implemented as DDR2 SDRAM with a parallel memory interface. It is provided in a 60-ball thin FBGA package suitable for compact board-level integration.
Key attributes include a 64M × 8 memory organization, a 400 MHz clock frequency, a 1.7 V–1.9 V supply range, and an operating temperature range from −40°C to 95°C (TC), making the device applicable where DDR2 parallel DRAM is specified.
Key Features
- Memory Type & Technology DDR2 SDRAM, volatile DRAM technology offering standard DDR2 signaling and behavior.
- Capacity & Organization 512 Mbit total memory organized as 64M × 8 for byte-wide parallel access.
- Performance 400 MHz clock frequency with a 400 ps access time and a 15 ns write cycle time (word page) for timing characterization.
- Voltage & Power Operates from 1.7 V to 1.9 V supply voltage as specified for device operation.
- Package 60-ball thin FBGA package (60-TFBGA / 60-FBGA, 8×10) for surface-mount PCB designs.
- Operating Temperature Specified to operate from −40°C to 95°C (TC), supporting a wide thermal range for deployed systems.
- Interface Parallel memory interface (standard for DDR2 devices) supporting typical parallel DRAM integration.
- Environmental Status RoHS status: not specified in the provided product data.
Unique Advantages
- 512 Mbit density in a compact package: Provides half-gigabit DDR2 capacity in a 60-ball FBGA for space-constrained designs.
- DDR2 performance parameters provided: 400 MHz clock and 400 ps access time enable designers to match timing requirements explicitly.
- Low-voltage operation: 1.7 V–1.9 V supply range supports designs targeting DDR2 power envelopes.
- Wide operating temperature: −40°C to 95°C (TC) rating allows deployment across a broad range of thermal environments.
- Standard parallel interface and organization: 64M × 8 layout and parallel interface simplify integration into existing DDR2 memory subsystems.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The IC DRAM 512MBIT PARALLEL 60FBGA (MT47H64M8SH-25E IT:H) is positioned for designs that require a dedicated DDR2 parallel DRAM device with defined timing, voltage, and thermal characteristics. Its 512 Mbit density, 64M × 8 organization, and 60-ball FBGA package provide a clear specification set for board-level memory integration.
This device is suitable for engineers and procurement teams seeking a documented DDR2 memory component with explicit performance and environmental parameters, enabling predictable integration and system-level planning.
Request a quote or submit a pricing inquiry to obtain availability and ordering information for the MT47H64M8SH-25E IT:H.
