MT47H64M8SH-25E:H
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 277 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 26 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x10) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT47H64M8SH-25E:H – IC DRAM 512MBIT PARALLEL 60FBGA
The MT47H64M8SH-25E:H is a 512 Mbit DDR2 SDRAM organized as 64M x 8 with a parallel memory interface. It delivers DDR2 architecture performance with a 400 MHz clock frequency and is supplied in a 60-TFBGA (8×10) package.
This device targets designs requiring compact, low-voltage DDR2 memory in a ball-grid package and supports operation across a commercial temperature range of 0°C to 85°C.
Key Features
- Core / Memory: DDR2 SDRAM technology with a total density of 512 Mbit organized as 64M × 8, providing standard DRAM memory format for parallel interfaces.
- Performance: 400 MHz clock frequency and a 400 ps access time for data access timing; write cycle time (word page) specified at 15 ns.
- Interface: Parallel memory interface for conventional DDR2 signaling and integration with compatible memory controllers.
- Power: Operates from a 1.7 V to 1.9 V supply range, supporting low-voltage DDR2 system designs.
- Package & Mounting: 60-TFBGA package (60-FBGA, 8×10) designed for surface-mount PCB assembly in compact layouts.
- Temperature Range: Commercial operating temperature range of 0°C to 85°C for standard embedded and consumer applications.
Unique Advantages
- Compact BGA footprint: The 60-TFBGA (8×10) package provides a small, high-density mounting option for space-constrained PCBs.
- Low-voltage operation: 1.7 V to 1.9 V supply range reduces power supply requirements relative to higher-voltage memories.
- DDR2 performance: 400 MHz clock frequency and 400 ps access time support high-speed memory access within the DDR2 specification.
- Predictable timing: Specified write cycle time (word page) of 15 ns enables consistent timing design and validation.
- Parallel interface: Standard parallel DRAM interface simplifies integration with controllers that support DDR2 parallel signaling.
Why Choose MT47H64M8SH-25E:H?
The MT47H64M8SH-25E:H combines DDR2 SDRAM performance with a compact 60-TFBGA package and low-voltage operation, making it suitable for designs that require 512 Mbit of parallel DRAM in a small form factor. Its specified timing and supply characteristics support predictable integration and system-level power planning.
This device is well suited to projects and customers seeking a defined DDR2 memory solution with commercial temperature range operation, clear electrical specifications, and a compact surface-mount package for space-optimized board layouts.
Request a quote or contact sales to discuss availability, pricing, and supply for the MT47H64M8SH-25E:H.
