MT48LC128M4A2TG-75:C TR

The MT48LC128M4A2TG-75:C TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 128M × 4 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous, pipelined operation with internal banks and programmable burst lengths for deterministic, clock‑aligned memory transfers.

Targeted for designs requiring a 3.3 V single‑supply SDRAM solution, this -75 speed grade supports up to 133 MHz clocking with a 5.4 ns access time at CL = 3 and operates over a commercial temperature range of 0 °C to 70 °C.

Key Features

• Memory Core 512 Mbit SDRAM organized as 128M × 4 with internal, multi‑bank architecture (4 banks) to hide row access/precharge and support concurrent operations.
• Synchronous, Pipelined Operation Fully synchronous device with all signals registered on the positive edge of the system clock and internal pipelining that allows column addresses to change every clock cycle.
• Performance and Timing PC100 and PC133 compliant; -75 speed grade supports 133 MHz clock frequency and 5.4 ns access time at CAS latency (CL) = 3. Write cycle time (word/page) is 15 ns.
• Programmable Burst and Refresh Programmable burst lengths of 1, 2, 4, 8, or full page; supports auto precharge, auto refresh and self refresh with a 64 ms / 8192‑cycle refresh interval.
• Electrical Single 3.3 V supply (3.0–3.6 V) with LVTTL‑compatible inputs and outputs for standard 3.3 V system integration.
• Package and Temperature 54‑pin TSOP II (400 mil, 10.16 mm width) plastic package; commercial operating temperature 0 °C to +70 °C.

Typical Applications

• PC100 / PC133 system memory Use in systems requiring PC100 or PC133 compliant synchronous DRAM with standard 3.3 V signaling.
• Compact, high‑density memory subsystems 512 Mbit density in a 54‑pin TSOP II package for space‑constrained board designs.
• Synchronous buffered memory for embedded systems Pipelined reads/writes and programmable burst lengths support predictable data flow in clocked embedded memory subsystems.

Unique Advantages

• High‑density SDRAM in a compact package: 512 Mbit capacity in a 54‑pin TSOP II (10.16 mm) simplifies layout for space‑limited designs.
• Clock‑aligned, pipelined operation: Fully synchronous design with registered inputs/outputs enables deterministic timing and supports burst‑mode transfers.
• PC100/PC133 compatibility: Speed grade and timing options align with PC100/PC133 system requirements for straightforward integration.
• Flexible refresh and power modes: Auto refresh and self refresh modes with standard 8K refresh cycles reduce external refresh management.
• Standard 3.3 V signaling: Single 3.0–3.6 V supply and LVTTL‑compatible I/O simplify power sequencing and interfacing with common logic families.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The MT48LC128M4A2TG-75:C TR delivers a verified 512 Mbit SDRAM solution with PC100/PC133 timing, pipelined synchronous operation, and programmable burst capabilities suited to designs that need predictable, clocked memory performance in a compact TSOP II package. Its commercial temperature rating and standard 3.3 V supply make it appropriate for a broad range of board‑level memory subsystems.

This part is appropriate for engineers specifying a parallel SDRAM device where density, burst‑transfer performance, and a 54‑pin TSOP II footprint are required. The device’s refresh, power and timing options provide design flexibility while using a widely supported SDRAM architecture.

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