MT47H64M8SH-25E IT:H TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 651 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x10) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Automotive | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of MT47H64M8SH-25E IT:H TR – IC DRAM 512MBIT PARALLEL 60FBGA
The MT47H64M8SH-25E IT:H TR is a 512 Mbit DDR2 SDRAM device from Micron Technology Inc., organized as 64M × 8 and delivered in a 60-FBGA (8×10) package. It provides volatile, parallel-memory storage designed for synchronous DDR2 operation.
This device targets designs that require a compact, board-mounted DDR2 memory solution with a 400 MHz clock rate, 400 ps access time, and a wide operating temperature range of −40°C to 95°C.
Key Features
- Core / Memory Architecture DDR2 SDRAM technology organized as 64M × 8 for a total memory size of 512 Mbit.
- Performance 400 MHz clock frequency with 400 ps access time and a write cycle time (word page) of 15 ns for synchronous data transfer.
- Interface Parallel memory interface consistent with DDR2 operation.
- Power Operating supply voltage range of 1.7 V to 1.9 V.
- Package 60-TFBGA / 60-FBGA (8×10) package format for compact board-level integration.
- Environmental / Temperature Range Specified operating temperature range from −40°C to 95°C (TC).
Typical Applications
- Parallel DDR2 memory subsystems — Provides 512 Mbit of DDR2 SDRAM in a parallel interface for designs requiring synchronous DRAM capacity and timing.
- High-frequency data buffering — 400 MHz clock and 15 ns write cycle time support use where low-latency read/write windows are required.
- Space-constrained board assemblies — 60-FBGA (8×10) package enables compact mounting while supporting a wide operating temperature range.
Unique Advantages
- Compact BGA footprint: The 60-FBGA (8×10) package minimizes PCB area for high-density assemblies.
- Synchronous DDR2 performance: 400 MHz clock and 400 ps access time deliver predictable timing for synchronous memory subsystems.
- Wide operating temperature: Rated for −40°C to 95°C (TC), enabling operation across broad thermal environments.
- Low-voltage operation: 1.7 V to 1.9 V supply range suitable for systems designed around DDR2 power rails.
- Standard memory organization: 64M × 8 arrangement provides a conventional footprint for parallel DRAM designs.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT47H64M8SH-25E IT:H TR combines DDR2 SDRAM architecture with a compact 60-FBGA package and a 512 Mbit density, offering a straightforward memory option for systems that require synchronous parallel DRAM with defined timing characteristics. Its 400 MHz clock capability, 400 ps access time, and 15 ns write cycle time make it suitable for designs that need deterministic DDR2 performance within a tight board footprint.
With a 1.7 V–1.9 V supply range and an operating temperature window of −40°C to 95°C, this Micron device is positioned for applications demanding low-voltage DDR2 operation and extended thermal tolerance while retaining a standard memory organization for design reuse.
Request a quote or submit an inquiry to receive pricing and lead-time information for the MT47H64M8SH-25E IT:H TR.
