MT47H64M8SH-25E:H TR

The MT47H64M8SH-25E:H TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 in a parallel memory interface. It implements DDR2 architecture with features for timing control, signal alignment and on-die termination to support high-throughput burst transfers.

Designed for systems that require a compact FBGA footprint and 1.8 V-class I/O, this device targets applications needing documented timing options, selectable burst lengths and standard DDR2 signaling in a 60‑ball FBGA package.

Key Features

• Memory Type & Organization 512 Mbit DDR2 SDRAM, organized as 64M × 8 with four internal banks for concurrent operation.
• DDR2 Architecture JEDEC DDR2 SDRAM with 4n-bit prefetch, DLL to align DQ and DQS transitions, and programmable CAS latency.
• Timing & Performance Clock frequency listed at 400 MHz, access time 400 ps and write cycle time (word page) of 15 ns; selectable burst lengths of 4 or 8.
• I/O & Voltage VDD/VDDQ range 1.7 V to 1.9 V; JEDEC-standard 1.8 V I/O (SSTL_18-compatible). Features include differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8.
• Signal Integrity Features On-die termination (ODT) and support for JEDEC clock jitter specifications to assist with signal integrity and timing margins.
• Package & Mounting 60-ball TFBGA (8 × 10 mm) surface-mount package (60‑FBGA footprint) for compact board-level integration.
• Operating Range Commercial temperature operation: 0 °C to +85 °C (TC).
• Standards & Compliance Documented as RoHS‑compliant in the product datasheet and provided with JEDEC-aligned timing and addressing information.

Typical Applications

• Embedded system memory — 512 Mbit DDR2 parallel memory for designs requiring 1.8 V I/O and compact FBGA packaging.
• Space-constrained modules — 60-ball (8 × 10 mm) FBGA package provides density for compact PCBs while delivering DDR2 capacity.
• High-throughput buffering — DDR2 architecture with programmable CAS and burst lengths supports burst transfers and frame/buffer storage.

Unique Advantages

• Compact footprint: 60‑ball FBGA (8 × 10 mm) minimizes PCB area for space-limited designs.
• Flexible timing configuration: Programmable CAS latency and selectable burst lengths allow matching memory timing to system requirements.
• Industry-standard I/O: SSTL_18-compatible 1.8 V signaling and on-die termination simplify integration with standard DDR2 memory controllers.
• Signal alignment features: DLL and optional differential DQS/RDQS strobe support improve timing alignment for high-speed transfers.
• Documented integration data: Datasheet includes timing parameters, addressing and speed-grade information to streamline design verification.

Why Choose MT47H64M8SH-25E:H TR?

The MT47H64M8SH-25E:H TR delivers a documented DDR2 SDRAM solution in a compact 60‑ball FBGA package, providing designers with a 512 Mbit x8 memory option that supports programmable timing, on-die termination and SSTL_18-compatible I/O. Its feature set addresses timing alignment and burst-transfer needs while fitting space-constrained PCBs.

Backed by Micron Technology, Inc., this device is suitable for projects that require clear datasheet specifications for timing, addressing and speed grades, enabling predictable integration into systems that use 1.8 V-class DDR2 memory.

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