MT47H64M8SH-25E AIT:H TR

The MT47H64M8SH-25E AIT:H TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60‑ball TFBGA (8 × 10 mm) package. It implements DDR2 architecture with a 4n‑bit prefetch, internal DLL, and four internal banks to support concurrent memory operations.

Designed for temperature‑challenging environments and AEC‑Q100 qualification, this device targets automotive and industrial embedded designs that require compact, programmable DDR2 memory with 1.7–1.9 V supply operation and selectable performance points up to DDR2‑800 speed grades.

Key Features

• DDR2 SDRAM architecture — 4n‑bit prefetch, internal DLL, programmable CAS latency and posted CAS additive latency for flexible timing and burst control.
• Memory capacity & organization — 512 Mbit total capacity organized as 64M × 8 with 4 internal banks for concurrent operation.
• Speed grade — Part number suffix -25E indicates support for DDR2 speed grades including operation up to 800 MT/s (DDR2‑800) as defined in the datasheet timing table; nominal clock frequency listed at 400 MHz.
• Voltage & I/O — VDD/VDDQ = 1.8 V ±0.1 V (documented range 1.7 V–1.9 V); JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible) and adjustable data‑output drive strength.
• Signal integrity — Differential data strobe (DQS/DQS#) option, optional duplicate output strobe (RDQS) for x8, and on‑die termination (ODT) for improved signal margins.
• Timing & refresh — Selectable burst lengths of 4 or 8, WRITE latency = READ latency − 1 tCK, and standard 8192‑cycle refresh (64 ms refresh interval).
• Package & form factor — 60‑TFBGA (60‑ball FBGA, 8 × 10 mm) provides a compact footprint for space‑constrained PCBs; supplier package code 60‑FBGA (8×10).
• Environmental & qualification — AEC‑Q100 qualification and operating temperature range specified at −40°C to 95°C (TC); datasheet lists industrial temperature options and RoHS‑compliant notation.
• Access & cycle timing — Typical access time 400 ps and write cycle time (word page) 15 ns for responsive read/write operations.

Typical Applications

• Automotive systems — AEC‑Q100 qualification and −40°C to 95°C TC operating range make this DDR2 device suitable for automotive electronic control units and infotainment memory subsystems.
• Industrial embedded equipment — Industrial temperature options and robust timing control support memory functions in instrumentation and control systems exposed to wide temperature ranges.
• Embedded DDR2 memory — 512 Mbit capacity, parallel DDR2 interface, and programmable latency features serve as system memory in compact embedded designs requiring standard 1.8 V I/O.

Unique Advantages

• AEC‑Q100 qualified: Explicit qualification supports use in applications demanding automotive reliability and component-level qualification.
• Compact FBGA package: 60‑ball TFBGA (8 × 10 mm) minimizes board area while delivering 512 Mbit capacity for space‑constrained designs.
• Flexible timing and performance: Programmable CAS latency, DLL alignment of DQ/DQS with CK, and selectable burst lengths provide designers with timing flexibility to match system requirements.
• Signal integrity features: Differential DQS support, optional RDQS for x8, and on‑die termination enhance data timing and signal robustness on high‑speed buses.
• 1.8 V I/O and low-voltage operation: Defined supply range (1.7–1.9 V) and JEDEC‑standard SSTL_18 I/O reduce interface power and align with common DDR2 system rails.

Why Choose MT47H64M8SH-25E AIT:H TR?

The MT47H64M8SH-25E AIT:H TR delivers a balanced combination of DDR2 performance, compact package density, and qualification for demanding temperature and automotive environments. Its 512 Mbit capacity, 64M × 8 organization, and programmable timing options make it a practical choice for embedded and automotive memory applications requiring standard 1.8 V operation and robust signal features such as ODT and differential strobes.

Designed and documented by Micron Technology Inc., this device provides defined electrical and timing characteristics (including access time, write cycle timing, and speed‑grade definitions) that enable predictable integration into automotive and industrial systems where AEC‑Q100 qualification and wide temperature operation are required.

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