MT47H64M8SH-187E:H TR

The MT47H64M8SH-187E:H TR is a 512 Mbit volatile memory device implemented as DDR2 SDRAM with a parallel memory interface. It delivers a 64M × 8 organization with a 533 MHz clock frequency and is supplied in a 60‑TFBGA package.

This device is intended for designs that require a compact DDR2 DRAM solution with specified timing and electrical characteristics, including a 1.7 V to 1.9 V supply range and an operating temperature range of 0°C to 85°C.

Key Features

• Memory Architecture  DDR2 SDRAM technology in a 64M × 8 organization providing 512 Mbit total capacity.
• Performance  533 MHz clock frequency with an access time of 350 ps and a write cycle time (word/page) of 15 ns for predictable timing behavior.
• Voltage and Power  Operates from a 1.7 V to 1.9 V supply range as specified for DDR2 operation.
• Package  Supplied in a 60‑TFBGA package; supplier device package listed as 60‑FBGA (8×10).
• Interface and Format  Parallel DRAM interface suitable for systems designed to accept DDR2 parallel memory components.
• Operating Range  Specified operating temperature range: 0°C to 85°C (TC).
• Memory Type  Volatile DRAM memory format.

Typical Applications

• Systems requiring DDR2 DRAM  Use as a 512 Mbit DDR2 memory component in designs that accept a parallel DDR2 interface and 60‑TFBGA package.
• Compact board-level memory  Suitable where a 60‑FBGA (8×10) footprint and 512 Mbit density fit board layout constraints.
• Designs with defined timing needs  Applies to applications that require the specified 533 MHz clocking, 350 ps access time, and 15 ns write cycle timing.

Unique Advantages

• 512 Mbit density: Provides a mid-range memory capacity in a single 64M × 8 DDR2 device to match system memory budgets.
• DDR2 performance at 533 MHz: Enables operation at a specified 533 MHz clock frequency with documented access and cycle timings.
• Compact BGA packaging: 60‑TFBGA / 60‑FBGA (8×10) footprint supports high‑density board designs where area is a consideration.
• Low-voltage operation: 1.7 V to 1.9 V supply range aligns with DDR2 power domains and helps constrain supply design.
• Specified thermal range: Rated for operation from 0°C to 85°C (TC), allowing deployment within that ambient range.
• Clear timing specifications: Access time and write cycle time values provide deterministic parameters for memory subsystem design.

Why Choose MT47H64M8SH-187E:H TR?

The MT47H64M8SH-187E:H TR from Micron Technology Inc. is a straightforward DDR2 SDRAM device offering 512 Mbit capacity in a 64M × 8 organization. Its defined electrical and timing specifications—533 MHz clocking, 350 ps access time, 15 ns write cycle, and a 1.7 V–1.9 V supply range—make it suitable for designs that require predictable DDR2 behavior in a compact 60‑TFBGA package.

Choose this part for projects that need a vendor‑supplied DDR2 memory component with clear capacity, timing, voltage, and temperature specifications for board‑level memory integration and system-level planning.

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