MT47H64M8SH-25E AIT:H

The MT47H64M8SH-25E AIT:H is a 512 Mbit DDR2 SDRAM organized as 64M x 8 with a parallel memory interface in a 60-ball TFBGA package. It implements DDR2 architecture with 4 internal banks, programmable CAS latency and selectable burst lengths for buffered data transfer.

Targeted for applications requiring automotive-grade memory, this device supports AEC-Q100 qualification and a wide operating temperature range, offering a compact, low-voltage (1.7–1.9 V) DDR2 memory option for embedded and in-vehicle systems.

Key Features

• DDR2 SDRAM core  4n-bit prefetch architecture with programmable CAS latency and posted CAS additive latency; selectable burst lengths of 4 or 8 for flexible data sequencing.
• Memory organization & capacity  512 Mbit configured as 64M × 8 with 4 internal banks to support concurrent bank operations.
• Performance and timing  Specified clock frequency of 400 MHz and access time of 400 ps; write cycle time (word page) of 15 ns. Timing options align with DDR2 speed grades.
• Low-voltage operation  VDD and VDDQ specified at 1.8 V ±0.1 V (product supply range 1.7 V–1.9 V), with JEDEC-standard 1.8 V I/O compatibility (SSTL_18-compatible).
• Signal and timing features  Differential data strobe (DQS/DQS#) option and duplicate output strobe (RDQS) option for x8 configuration; DLL aligns DQ/DQS transitions with CK.
• Signal integrity and configurability  On-die termination (ODT) and adjustable data-output drive strength to aid signal integrity on parallel interfaces.
• Package and thermal  60-ball thin FBGA package (60-TFBGA, 8 mm × 10 mm) for compact board-level integration; operating temperature range −40 °C to +95 °C (TC).
• Reliability and qualification  AEC-Q100 qualification and automotive grade designation for use in automotive system designs; supports JEDEC clock jitter specification and standard 8K refresh cycles.

Typical Applications

• Automotive systems  Automotive-grade DDR2 memory for in-vehicle electronics and control modules requiring AEC-Q100-qualified components and wide temperature support.
• Embedded controllers  On-board parallel memory for embedded systems that need a compact 512 Mbit DDR2 device in a 60-ball FBGA footprint.
• Industrial equipment  Industrial and harsh-environment applications that require extended operating temperature range and automotive-level component qualification.

Unique Advantages

• Automotive-qualified design: AEC-Q100 qualification and an automotive grade ensure the device meets qualification expectations for vehicle electronics.
• Compact FBGA footprint: 60-TFBGA (8×10 mm) package enables high-density board integration while maintaining DDR2 performance in space-constrained designs.
• Low-voltage DDR2 operation: 1.7 V–1.9 V supply range with JEDEC-standard 1.8 V I/O reduces system-level power and aligns with standard SSTL_18 signaling.
• Flexible timing and signal options: Programmable CAS latency, DLL alignment, DQS/DQS# differential strobe options and adjustable drive strength allow adaptation to varied board layouts and timing requirements.
• Robust thermal range: Specified operation from −40 °C to +95 °C (TC) supports deployment in demanding temperature environments.

Why Choose MT47H64M8SH-25E AIT:H?

The MT47H64M8SH-25E AIT:H delivers a compact, automotive-qualified DDR2 SDRAM solution with 512 Mbit density, designed for systems that require JEDEC-compatible DDR2 signaling, low-voltage operation, and a wide operating temperature range. Its 60-ball FBGA package and configurable timing/drive features make it suitable for embedded and in-vehicle memory subsystems where board space and reliability are critical.

This device is appropriate for designers seeking a verifiable DDR2 memory component with AEC-Q100 qualification, programmable latency options, and on-die termination to simplify signal integrity management in parallel-interface designs.

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