MT47H64M8JN-25E IT:G

The MT47H64M8JN-25E IT:G from Micron Technology Inc. is a 512 Mbit volatile DRAM implemented as SDRAM - DDR2, organized as 64M × 8 with a parallel memory interface and packaged in a 60-TFBGA / 60-FBGA (8×10) package. It provides standard DDR2 architecture in a compact ball-grid array to support system memory requirements where a parallel DDR2 interface is specified.

Key device characteristics include a 400 MHz clock frequency, 400 ps access time, a 15 ns write cycle time (word page), a nominal supply range of 1.7 V to 1.9 V, and an operating temperature range of -40 °C to 95 °C (TC), offering a balance of performance, low-voltage operation, and compact packaging for board-level integration.

Key Features

• Core / Memory  SDRAM - DDR2 technology implemented as a 512 Mbit DRAM in a 64M × 8 memory organization, providing byte-wide data paths for parallel access.
• Performance  400 MHz clock frequency and 400 ps access time enable high-speed data transfers; write cycle time (word page) is specified at 15 ns.
• Power  Operates from a 1.7 V to 1.9 V supply range, supporting low-voltage system designs.
• Package  Delivered in a 60-TFBGA package; supplier device package listed as 60-FBGA (8×10), suitable for compact board-level footprints.
• Interface  Parallel memory interface consistent with DDR2 SDRAM signaling and organization.
• Environmental / Temperature  Rated for operation from -40 °C to 95 °C (TC), covering a broad range of thermal conditions.
• Memory Attributes  Volatile DRAM memory format with specified memory size of 512 Mbit.

Unique Advantages

• Compact BGA package: The 60-FBGA (8×10) form factor enables dense board integration while maintaining DDR2 connectivity.
• High-speed DDR2 operation: 400 MHz clock rate and 400 ps access time support fast parallel memory transactions.
• Low-voltage operation: 1.7 V to 1.9 V supply reduces power draw relative to higher-voltage alternatives where applicable.
• Deterministic timing: Specified write cycle time (word page) of 15 ns provides clear timing parameters for system design.
• Wide operating temperature: Rated from -40 °C to 95 °C (TC) for use across varied thermal environments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8JN-25E IT:G positions itself as a straightforward, specification-driven DDR2 SDRAM component offering 512 Mbit capacity and a parallel interface in a compact 60-ball BGA package. Its combination of 400 MHz operation, defined timing parameters, and low-voltage supply range makes it suitable for designs that require predictable DDR2 memory performance and a small board footprint.

This device is appropriate for engineers and procurement teams seeking a Micron-manufactured DDR2 DRAM with explicit electrical and thermal specifications, enabling clear integration into system memory subsystems and allowing for maintenance of consistent design margins and supply planning.

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