MT47H64M8CF-25E L:G TR

The MT47H64M8CF-25E L:G TR is a 512 Mbit DDR2 SDRAM device manufactured by Micron Technology Inc. It implements a 64M × 8 memory organization with a parallel DDR2 interface and a compact 60-ball FBGA package.

Designed for applications requiring high-speed parallel DRAM, the device offers 400 MHz clock operation with a 400 ps access time and supports standard DDR2 operating voltages. It is specified for operation from 0°C to 85°C.

Key Features

• Memory Core 512 Mbit DRAM organized as 64M × 8 for parallel data paths and standard DRAM operation.
• Technology & Performance DDR2 SDRAM technology with a 400 MHz clock frequency and 400 ps access time, and a 15 ns write cycle time (word page) for predictable timing behavior.
• Interface Parallel memory interface suitable for systems using DDR2 parallel signaling.
• Power Specified supply voltage range of 1.7 V to 1.9 V to match DDR2 power rails.
• Package & Mounting 60-TFBGA package; supplier device package listed as 60-FBGA (8×10) for compact board-level integration.
• Operating Range Temperature range specified from 0°C to 85°C (TC) for standard commercial-temperature applications.

Typical Applications

• Embedded memory subsystems — Provides 512 Mbit of DDR2 parallel DRAM for systems that require board-level DRAM integration.
• High-speed buffering — 400 MHz clock and 400 ps access support applications needing fast read/write cycles and predictable timing.
• Compact form-factor designs — 60-FBGA (8×10) package suits space-constrained PCBs requiring surface-mount DRAM.

Unique Advantages

• High-frequency DDR2 operation: 400 MHz clock frequency combined with 400 ps access time enables fast memory transactions aligned with DDR2 timing requirements.
• Standard parallel interface: Parallel DDR2 signaling and 64M × 8 organization simplify integration into designs that use parallel DRAM architectures.
• Low-voltage operation: 1.7 V–1.9 V supply range supports DDR2 power domains and can help reduce power dissipation compared to higher-voltage memories.
• Compact BGA package: 60-TFBGA / 60-FBGA (8×10) footprint reduces board area while maintaining ball-grid connectivity for automated assembly.
• Predictable timing: 15 ns write cycle time (word page) and specified access parameters aid deterministic memory timing design.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

IC DRAM 512MBIT PARALLEL 60FBGA (MT47H64M8CF-25E L:G TR) positions itself as a compact DDR2 SDRAM option offering 512 Mbit capacity, 400 MHz clocking, and defined access and cycle timings. Its parallel interface, standard DDR2 voltage range, and BGA packaging make it suitable for designers needing predictable DDR2 memory behavior in space-constrained boards.

This device is appropriate for engineers and procurement teams specifying board-level DDR2 DRAM where documented timing (400 ps access, 15 ns write cycle), supply voltage range (1.7 V–1.9 V), and commercial operating temperature (0°C–85°C) are required for system integration and long-term support.

Request a quote or contact sales to obtain pricing, lead-time, and availability information for the MT47H64M8CF-25E L:G TR.