MT47H64M8CF-25E L:G

The MT47H64M8CF-25E L:G is a 512 Mbit DDR2 SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements a 4-bank DDR2 architecture with JEDEC-standard 1.8 V I/O and is specified for commercial temperature operation (0°C to 85°C).

Designed for systems requiring compact DDR2 volatile memory, the device offers 400 MHz clock operation, fast access timing, and platform-level features such as on-die termination and programmable timing options to support a range of DDR2-based designs.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 64M × 8 with four internal banks for concurrent operation.
• Performance Clock frequency specified at 400 MHz with an access time of 400 ps and timing options including programmable CAS latency and posted CAS additive latency.
• DDR2 Architecture 4n-bit prefetch architecture, DLL to align DQ and DQS with CK, and selectable burst lengths of 4 or 8 to support typical DDR2 access patterns.
• Data Strobe and Output Options Differential data strobe (DQS/DQS#) option; duplicate output strobe (RDQS) option available for x8 configuration.
• Signal Integrity and Drive JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with adjustable data-output drive strength and on-die termination (ODT) to simplify board-level termination.
• Power and Voltage Supply voltage range listed as 1.7 V to 1.9 V (nominal +1.8 V ±0.1 V for VDD and VDDQ).
• Refresh and Reliability Features 64 ms, 8192-cycle refresh support to meet standard DRAM maintenance requirements.
• Package and Temperature 60-ball TFBGA (8 mm × 10 mm) package with commercial operating temperature range 0°C to 85°C.

Typical Applications

• Memory expansion for DDR2 platforms — Provides a compact 512 Mbit DDR2 option for systems requiring standard parallel DDR2 memory.
• Embedded systems — Compact 60-ball FBGA package and 1.8 V I/O suited to space-constrained board designs that implement DDR2 memory.
• Platform-level buffering and frame storage — 4-bank DDR2 architecture and selectable burst lengths support common buffering use cases in digital systems.

Unique Advantages

• JEDEC-standard 1.8 V I/O: Ensures compatibility with standard DDR2 signaling (SSTL_18-compatible) for straightforward interface design.
• Compact FBGA package: 60-ball (8×10 mm) TFBGA footprint reduces board area while providing standard FBGA mounting.
• Flexible timing and drive control: Programmable CAS latency, additive latency, and adjustable output drive strength allow tuning for system timing and signal integrity.
• On-die termination and DLL: Integrated ODT and DLL reduce external termination complexity and help align data strobes for reliable high-speed operation.
• Commercial temperature rating: Specified 0°C to 85°C operation for designs targeting standard commercial environments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H64M8CF-25E L:G delivers a verified DDR2 SDRAM building block with 512 Mbit capacity, a 64M × 8 organization, and a compact 60-ball FBGA package for systems that require a standard 1.8 V DDR2 memory solution. Its combination of programmable timing, on-die termination, and data-strobe options supports designers focused on reliable high-speed parallel memory interfaces.

This device is well suited to engineers and procurement teams specifying commercial-temperature DDR2 memory for embedded and platform designs where compact packaging, standard JEDEC signaling, and configurable timing/drive behavior are important for integration and signal integrity control.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the MT47H64M8CF-25E L:G.