MT47H64M8CF-25E AIT:G TR

The MT47H64M8CF-25E AIT:G TR is a 512 Mbit volatile DRAM device implemented as DDR2 SDRAM and organized as 64M × 8. It is supplied in a compact 60-TFBGA (60-FBGA, 8×10) package and implements a parallel memory interface.

This device targets designs that require automotive-grade, high-speed parallel DRAM: it operates at a 400 MHz clock frequency with a 400 ps access time, supports a 1.7 V–1.9 V supply range, and is AEC-Q100 qualified with an operating temperature range of −40 °C to 95 °C.

Key Features

• Core / Memory Architecture DDR2 SDRAM organized as 64M × 8, providing 512 Mbit of volatile memory capacity.
• Performance 400 MHz clock frequency and 400 ps access time with a 15 ns write cycle time (word page) for predictable DDR2 timing.
• Power Operates from a 1.7 V to 1.9 V supply range suitable for DDR2 voltage domains.
• Package 60-TFBGA (60-FBGA, 8×10) package for a compact, board-level footprint.
• Temperature & Qualification Automotive grade with AEC-Q100 qualification and an operating temperature range of −40 °C to 95 °C.
• Interface & Format Parallel memory interface in DRAM format for integration with parallel memory controllers.

Typical Applications

• Automotive systems — AEC-Q100 qualification and −40 °C to 95 °C operating range make the device suitable for automotive-grade electronic modules that require volatile DDR2 memory.
• Embedded designs requiring parallel DDR2 memory — 512 Mbit (64M × 8) capacity with 400 MHz operation supports designs that implement parallel DRAM for buffering or working memory.
• Space-constrained PCBs — The 60-FBGA (8×10) package provides a compact option for board-level integration where PCB area is limited.

Unique Advantages

• AEC-Q100 qualification: Provides automotive-grade qualification for designs that demand component-level automotive reliability and temperature tolerance.
• Wide operating temperature range: −40 °C to 95 °C supports deployment in harsh thermal environments without specification changes.
• High-speed DDR2 timing: 400 MHz clock and 400 ps access time help meet timing requirements for parallel memory operations.
• Compact BGA footprint: 60-TFBGA (8×10) package reduces board area while maintaining standard BGA assembly compatibility.
• <strong(Standard DDR2 voltage domain): 1.7 V–1.9 V supply aligns with DDR2 system power rails for straightforward power planning.

Why Choose MT47H64M8CF-25E AIT:G TR?

The MT47H64M8CF-25E AIT:G TR combines DDR2 performance with automotive-grade qualification, delivering a 512 Mbit parallel DRAM option that balances speed, compact packaging, and temperature robustness. Its 64M × 8 organization, 400 MHz operation, and 1.7 V–1.9 V supply make it suitable for systems that require established DDR2 timing and predictable behavior.

This device is appropriate for engineers specifying automotive and rugged embedded designs that need a compact, AEC-Q100 qualified volatile memory solution. Its package and electrical specifications support integration into constrained PCBs while maintaining the operating and qualification characteristics required for automotive applications.

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