MT47H64M8CB-5E IT:B TR

The MT47H64M8CB-5E IT:B TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 SDRAM architecture with a 4n-bit prefetch, internal DLL, selectable burst lengths, and programmable CAS latency for flexible timing and throughput.

Targeted for designs that require low-voltage (+1.8V ±0.1V) DDR2 memory with industrial-temperature operation (–40°C to 95°C TC), this device delivers compact board-level memory capacity with options for on-die termination and differential data strobe support.

Key Features

• Core / Architecture DDR2 SDRAM with 4n-bit prefetch and an internal DLL to align DQ and DQS transitions with CK, enabling standard DDR2 timing operation.
• Memory Organization 512 Mbit total capacity configured as 64M × 8 with 4 internal banks for concurrent operation.
• Performance & Timing Clock frequency listed at 200 MHz (DDR2 data rates supported per timing options) with an access time of 600 ps and programmable CAS latency and additive latency options.
• Interfaces & Data Integrity JEDEC-standard 1.8V I/O (SSTL_18-compatible) with options for differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS) for x8 configurations.
• Power & Voltage Vdd and VddQ specified at +1.8V ±0.1V (product data lists 1.7V–1.9V), supporting low-voltage DDR2 system architectures.
• On-Die Features On-die termination (ODT) and adjustable data-output drive strength to simplify board termination and signal integrity tuning.
• Refresh & Reliability Standard 8,192-cycle refresh (64 ms) scheme and 4 internal banks to support sustained memory activity.
• Package & Temperature 60-ball FBGA package (60-FBGA) with an industrial temperature option rated from –40°C to 95°C (TC).

Typical Applications

• Industrial Embedded Systems — Memory for controllers and embedded modules that require industrial temperature operation and compact board-level integration.
• Board-Level Memory Expansion — Adds 512 Mbit of parallel DDR2 memory in designs needing JEDEC-standard 1.8V I/O and programmable latency options.
• Space-Constrained Designs — 60-ball FBGA package provides a compact footprint for small-form-factor PCBs where density is required.
• Low-Voltage DDR2 Architectures — Suitable for systems designed around 1.8V DDR2 signaling with on-die termination and drive-strength adjustment for signal tuning.

Unique Advantages

• Industrial Temperature Support: Rated operation from –40°C to 95°C (TC), enabling deployment in environments with wide temperature ranges.
• JEDEC-Standard 1.8V I/O: Ensures compatibility with standard SSTL_18 signaling for DDR2 system designs operating at low voltage.
• Compact FBGA Footprint: 60-ball FBGA package reduces board area while delivering 512 Mbit density for space-limited applications.
• Flexible Performance Tuning: Programmable CAS latency, additive latency, selectable burst lengths, and adjustable drive strength allow designers to tune timing and signal integrity.
• On-Die Termination & DQS Options: ODT and differential DQS/DQS# (and RDQS for x8) options help simplify board termination and improve read/write timing control.
• Concurrent Operation: Four internal banks and DDR2 architecture support overlapping transactions to improve effective throughput in parallel memory systems.

Why Choose MT47H64M8CB-5E IT:B TR?

The MT47H64M8CB-5E IT:B TR positions itself as a compact, low-voltage DDR2 memory component designed for embedded and industrial applications that require 512 Mbit density, programmable timing, and industrial-temperature capability. Its 60-FBGA package and JEDEC-standard 1.8V I/O make it suitable for designs where board space and signal standards are key constraints.

With on-die termination, adjustable drive strength, internal DLL, and multiple timing options, this Micron DDR2 device offers design flexibility for engineers optimizing latency, signal integrity, and board-level integration in long-lived hardware platforms.

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