MT47H64M8CB-37V:B TR

The MT47H64M8CB-37V:B TR is a 512 Mbit DDR2 SDRAM organized as 64M x 8 with a parallel memory interface in a 60-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and four internal banks to support concurrent memory operations.

Designed for systems requiring commercial-temperature operation (0°C to 85°C) and low-voltage DDR2 signaling, this device targets applications that need compact board-level DRAM with configurable timing and burst options, while offering features for signal integrity and performance tuning.

Key Features

• Memory Density & Organization — 512 Mbit capacity arranged as 64M x 8 with four internal banks for concurrent access.
• DDR2 SDRAM Architecture — 4n-bit prefetch architecture with selectable burst lengths (4 or 8) and programmable CAS latency for flexible performance tuning.
• Clock & Timing — Specified clock frequency 267 MHz with access time of 500 ps and a write cycle time (word page) of 15 ns.
• Voltage & I/O — Operates from 1.7 V to 1.9 V (Vdd and VddQ), with JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Signal Integrity — On-die termination (ODT), DLL to align DQ and DQS transitions with CK, and an option for differential data strobe (DQS/DQS#) to support reliable high-speed transfers.
• Data Strobe Options (x8) — Duplicate output strobe (RDQS) option for x8 configurations to assist data capture.
• Refresh & Reliability — 64 ms, 8,192-cycle refresh implemented to maintain data integrity during operation.
• Package — 60-ball FBGA (compact footprint) suitable for board-level mounting.
• Operating Temperature — Commercial temperature range: 0°C to 85°C (T_C).
• Standards & Compliance — JEDEC clock jitter support and RoHS compliant as stated in the device datasheet.

Typical Applications

• Embedded systems — Provides parallel DDR2 memory for compact embedded designs that require 512 Mbit DRAM in a small FBGA footprint.
• Consumer electronics — Used where low-voltage DDR2 memory and selectable burst/timing options are required for board-level memory subsystems.
• Networking and communications equipment — Suited for modules requiring concurrent bank operation and signal-integrity features such as ODT and DLL.

Unique Advantages

• Low-voltage operation: 1.7 V to 1.9 V supply reduces operating voltage compared with legacy supplies while maintaining DDR2 signaling compatibility.
• Compact FBGA package: 60-ball FBGA minimizes PCB area for space-constrained designs.
• Flexible timing and throughput: Programmable CAS latency, selectable burst lengths, and 4n prefetch architecture allow designers to tune performance to application needs.
• Enhanced signal integrity: On-die termination, DLL alignment of DQ/DQS with CK, and differential DQS options improve high-speed data capture and timing margins.
• Concurrent access capability: Four internal banks and standard DDR2 features support efficient access patterns for sustained throughput.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT47H64M8CB-37V:B TR is positioned as a compact, low-voltage DDR2 memory device that balances density, configurable timing, and signal-integrity features for commercial-temperature designs. Its 512 Mbit capacity, 60-ball FBGA packaging, and DDR2 architecture make it suitable for engineers specifying parallel DRAM where board space, power, and timing flexibility are important considerations.

This part is appropriate for designs that require JEDEC-standard 1.8 V I/O support, on-die termination, and options for differential data strobe and duplicate output strobe in x8 configurations, offering design-time flexibility and long-term availability within the specified commercial temperature range.

For pricing, availability, or to request a quote for MT47H64M8CB-37V:B TR, please contact the supplier or submit a request for a formal quote through your procurement channel.