MT47H64M8CB-37E:B

The MT47H64M8CB-37E:B is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA package. It delivers DDR2 architecture features—multi-bank operation, programmable CAS latency and selectable burst lengths—targeted at system designs that require compact, standard DDR2 memory in a commercial temperature range.

Designed for operation from 0°C to 85°C and a supply window of 1.7–1.9 V, the device supports a 267 MHz clock frequency and provides predictable timing characteristics suitable for designs that reference JEDEC DDR2 timing and signaling conventions.

Key Features

• Memory Core & Architecture 512 Mbit DDR2 SDRAM organized as 64M × 8 with 4 internal banks and a 4n-bit prefetch architecture for standard DDR2 read/write operation.
• Performance & Timing Supports a clock frequency of 267 MHz and an access time of 500 ps; write cycle time (word page) is specified at 15 ns for predictable memory timing.
• Low-Voltage Operation Vdd/VddQ specified at 1.7–1.9 V (Vdd = +1.8 V ±0.1 V in datasheet), enabling designs that target 1.8 V DDR2 power rails.
• JEDEC-Standard I/O and Signal Options JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with differential data strobe (DQS/DQS#) option; x8 configuration offers duplicate output strobe (RDQS) option.
• Programmable Latency and Burst Programmable CAS latency and selectable burst lengths of 4 or 8 to match system timing and data-transfer requirements.
• On-Die Termination & DLL On-die termination (ODT) and a DLL to align DQ and DQS transitions with CK for improved signal behavior in DDR2 systems.
• Package & Thermal Supplied in a 60-ball FBGA package and rated for commercial temperature operation (0°C ≤ TC ≤ 85°C).

Typical Applications

• Embedded Memory Subsystems — Provides 512 Mbit of DDR2 parallel DRAM in a 60-ball FBGA for compact board-level memory implementations.
• Commercial Temperature Electronics — Rated for 0°C to 85°C, suitable for products and systems that operate within the commercial temperature range.
• Space-Constrained PCBs — 60-FBGA package supports high-density board layouts where a small-footprint DRAM is required.

Unique Advantages

• Standard DDR2 Feature Set: Implements JEDEC-standard DDR2 functions including programmable CAS latency, selectable burst lengths, and 4 internal banks for standard-compliant memory designs.
• Compact Packaging: 60-ball FBGA reduces PCB area for designs needing a small form-factor DRAM solution.
• Low-Voltage Supply: Operates at 1.7–1.9 V (1.8 V nominal), aligning with 1.8 V DDR2 power domains for simplified power-supply design.
• Signal Integrity Options: On-die termination (ODT), DLL alignment, and differential DQS options help manage timing and signal integrity in DDR2 implementations.
• Deterministic Timing: Defined access time (500 ps), write cycle time (15 ns), and 267 MHz clock support predictable memory timing for system integration.

Why Choose MT47H64M8CB-37E:B?

The MT47H64M8CB-37E:B is positioned for system designs that require a compact, JEDEC-aligned DDR2 memory device with a 512 Mbit density and x8 organization. Its combination of 1.8 V operation, DDR2 timing features, on-die termination, and FBGA packaging make it appropriate for designs that prioritize a standardized DDR2 memory interface within a commercial temperature envelope.

This device is suited to engineers specifying DDR2 parallel DRAM where predictable timing, configurable latency/burst behavior, and a small package footprint are important considerations for product integration and PCB layout.

Request a quote or submit an inquiry for pricing and availability of the MT47H64M8CB-37E:B to receive detailed purchasing information and lead-time estimates.